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Epitaxial Sc$_x$Al$_{1-x}$N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ($\epsilon_r$) values relative to AlN. $\epsilon_r$ values of ~17 to 21 for Sc contents of…
The impact of epitaxial strain on the structural, electronic, and thermoelectric properties of p-type transparent Sr-doped LaCrO3 thin films has been investigated. For this purpose, high-quality fully strained La0.75Sr0.25CrO3 (LSCO)…
GaMnAs thin films with different Mn doping concentrations were grown via molecular beam epitaxy using a substrate temperature of 250 {\deg}C. The thin films were investigated using photoluminescence (PL) measurements from 8 to 300 K.…
Transition-metal nitrides constitute a versatile class of materials with diverse properties and wide-ranging applications. Exploring new surface orientations and uncovering novel properties can enable innovative material configurations with…
Topological insulators (TIs) are intriguing materials for advanced computing applications based on spintronics because they can host robust spin effects. For instance, TIs have intrinsically large spin generation enabled by their large…
Epitaxial Fe(Te,Se) thin films have been grown on various substrates but never been realized on magnetic layers. Here we report the epitaxial growth of four-fold Fe(Te,Se) film on a six-fold antiferromagnetic insulator, MnTe. The…
We measured the response of the surface state spectrum of epitaxial Sb2Te3 thin films to applied gate electric fields by low temperature scanning tunneling microscopy. The gate dependent shift of the Fermi level and the screening effect…
The most common allotrope of tungsten, {\alpha}-W, has a superconducting transition at a temperature of ~11 mK. However, two other forms of tungsten have been reported to have superconducting transitions in the temperature range Tc ~ 2-5 K…
The discovery of superconductivity (SC) with a transition temperature, Tc, up to 65K in single-layer FeSe (bulk Tc =8K) films grown on SrTiO3 substrates has attracted special attention to Fe-based thin films. The high Tc is a consequence of…
The Dirac semimetal PdTe${}_2$ becomes superconducting at a temperature $T_{c}=1.6$~K. Thermodynamic and muon spin rotation experiments support type-I superconductivity, which is unusual for a binary compound. A key property of a type-I…
Temperature- and magnetic-field dependent measurements of the resistance of ultrathin superconducting TiN films are presented. The analysis of the temperature dependence of the zero field resistance indicates an underlying insulating…
The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high quality Pb$_{1-x}$Sn$_x$Te(111) films and investigated the TCI phase by in-situ…
In this study, high-quality thin films of the topological semimetal phase NiTe$_2$ were prepared using molecular beam epitaxy (MBE) technique, confirmed through X-ray diffraction with pronounced Laue oscillations. Electrical transport…
SnTe belongs to the recently discovered class of topological crystalline insulators. Here we study the formation of line defects which break crystalline symmetry by strain in thin SnTe films. Strained SnTe(111) films are grown by molecular…
We have designed three-dimensional models of topological insulator thin films, showing a tunability of the odd number of Dirac cones on opposite surfaces driven by the atomic-scale geometry at the boundaries. This enables creation of a…
The topological crystalline insulator SnTe has been grown epitaxially on a Bi2Te3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p- and n-type carriers are found to coexist, and Shubnikov--de Haas oscillation data…
We investigate the magnetic field evolution of the superconducting state in a strongly disordered NbN thin film which exhibits a magnetic field tuned superconductor to insulator-like transition, employing low temperature scanning tunneling…
2H-TaS$_2$ few layers have been grown epitaxially onto GaN(0001). A high substrate growth temperature of 825$^{\circ}$C induces best structural properties of the overlayer, as revealed by in-situ electron diffraction (RHEED and LEED). The…
FeSn is a topological semimetal (TSM) and kagome antiferromagnet (AFM) composed of alternating Fe3Sn kagome planes and honeycomb Sn planes. This unique structure gives rise to exotic features in the band structures such as the coexistence…
Surfaces of three-dimensional topological insulators have emerged as one of the most remarkable states of condensed quantum matter1-5 where exotic electronic phases of Dirac particles should arise1,6-8. Here we report a discovery of surface…