Topological Surface Transport in Epitaxial SnTe Thin Films Grown on Bi2Te3

A. A. Taskin; Fan Yang; Satoshi Sasaki; Kouji Segawa; Yoichi Ando

doi:10.1103/PhysRevB.89.121302

Topological Surface Transport in Epitaxial SnTe Thin Films Grown on Bi2Te3

Mesoscale and Nanoscale Physics 2014-04-10 v2 Materials Science

Authors: A. A. Taskin , Fan Yang , Satoshi Sasaki , Kouji Segawa , Yoichi Ando

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Abstract

The topological crystalline insulator SnTe has been grown epitaxially on a Bi2Te3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p- and n-type carriers are found to coexist, and Shubnikov--de Haas oscillation data suggest that the n-type carriers are Dirac fermions residing on the SnTe (111) surface. This transport observation of the topological surface state in a p-type topological crystalline insulator became possible due to a downward band bending on the free SnTe surface, which appears to be of intrinsic origin.

Keywords

topological crystalline insulator SnTe Bi2Te3 molecular beam epitaxy Dirac fermions Shubnikov-de Haas oscillations surface transport

Cite

@article{arxiv.1305.2470,
  title  = {Topological Surface Transport in Epitaxial SnTe Thin Films Grown on Bi2Te3},
  author = {A. A. Taskin and Fan Yang and Satoshi Sasaki and Kouji Segawa and Yoichi Ando},
  journal= {arXiv preprint arXiv:1305.2470},
  year   = {2014}
}

Comments

6 pages, 4 figures (main text) + 7 pages, 7 figures (supplemental material); final version, Phys.Rev.B, Rapid Communications

Topological Surface Transport in Epitaxial SnTe Thin Films Grown on Bi2Te3

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