SnTe is a prototypical topological crystalline insulator, in which the gapless surface state is protected by a crystal symmetry. The hallmark of the topological properties in SnTe is the Dirac cones projected to the surfaces with mirror symmetry, stemming from the band inversion near the L points of its bulk Brillouin zone, which can be measured by angle-resolved photoemission. We have obtained the (111) surface of SnTe film by molecular beam epitaxy on BaF2(111) substrate. Photon-energy-dependence of in situ angle-resolved photoemission, covering multiple Brillouin zones in the direction perpendicular tothe (111) surface, demonstrate the projected Dirac cones at the Gamma_bar and M_bar points of the surface Brillouinzone. In addition, we observe a Dirac-cone-like band structure at the Gamma point of the bulk Brillouin zone,whose Dirac energy is largely different from those at the Gamma_bar and M_bar points.
@article{arxiv.1610.07759,
title = {ARPES study of the epitaxially grown topological crystalline insulator SnTe(111)},
author = {Yi Zhang and Zhongkai Liu and Bo Zhou and Yeongkwan Kim and Lexian Yang and Hyejin Ryu and Choongyu Hwang and Yulin Chen and Zahid Hussain and Zhi-Xun Shen and Sung-Kwan Mo},
journal= {arXiv preprint arXiv:1610.07759},
year = {2016}
}