Related papers: Fast high-power thyristors triggered in impact-ion…
The charge density wave (CDW) material 1T-TaS$_2$ exhibits a pulse-induced insulator-to-metal transition, which shows promise for next-generation electronics such as memristive memory and neuromorphic hardware. However, the rational design…
Due to its proximity to room temperature and demonstrated high degree of temperature tunability, the metamagnetic ordering transition in FeRh is attractive for novel high-performance computing devices seeking to use magnetism as the state…
Electron and photon triggers covering transverse energies from 5 GeV to several TeV are essential for signal selection in a wide variety of ATLAS physics analyses to study Standard Model processes and to search for new phenomena. Final…
Modern microelectronic systems require long term operational stability, necessitating precise reliability models to predict device lifecycles and identify governing failure mechanisms. This is particularly critical for high power GaN…
We report on the experimental study made on a successive prototype of High-Voltage CMOS (HV-CMOS) ATLASPix2 sensor for the tracking detector application, developed with 180 nm feature size. These sensors are to qualify mainly the peripheral…
This paper presents low power dissipation, low phase noise ring oscillators (ROs) based on Semiconductor Manufacturing International Corporation (SMIC) 0.18{\mu}m CMOS technology at liquid helium temperature (LHT). First, the…
We report anisotropic resistivity measurements of the heavy-fermion superconductor CeRh$_2$As$_2$ in magnetic fields up to 16 T and temperatures down to 0.35 K. The measured CeRh$_2$As$_2$ resistivity shows a signature corresponding to the…
Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of…
Design, fabrication and assembly of a novel fast-cycling accelerator magnet is presented. A short-sample magnet is powered with a single-turn HTS cable capable to carry 80 kA current at 20 K and generate 1.75 T field in a 40 mm magnet gap.…
Thyristor rectifiers are a well-established and cost-effective solution for controlled high-power rectification, commonly used for hydrogen electrolysis and HVDC transmission. However, small-signal modeling and analysis of thyristor…
The design of a 1 micrometer gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10 nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrodinger-Poisson (QCSP) and…
Threshold switching (TS) is a phenomenon where non-permanent changes in electrical resistance of a two-terminal device can be controlled by modulating the voltage bias. TS based on silver (Ag) conductive filaments has been observed in many…
Radiation tolerant, high speed and low power serializer ASIC is critical for optical link systems in particle physics experiments. Based on a commercial 0.25 um silicon-on-sapphire CMOS technology, we design a 16:1 serializer with 5 Gbps…
A 3.8ps root mean square (RMS) time synchronization implemented in a 20nm fabrication process ultrascale kintex Field Programmable Gate Array (FPGA) is presented. The multichannel high-speed serial transceivers (e.g. GTH) play a key role in…
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…
We excite the 717 nm electric quadrupole 6$D_{3/2} $ $\leftrightarrow$ 7$S_{1/2}$ transition in a laser-cooled $^{232}$Th$^{3+}$ ion crystal. The transition frequency and the lifetime of the metastable 7$S_{1/2}$ level are measured to be…
A new mechanism for memristive switching in 2D materials is through electric-field controllable electronic/structural phase transitions, but these devices have not outperformed status quo 2D memristors. Here, we report a high-performance…
Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of…
Topological insulators (TIs) are an unusual phase of quantum matter with nontrivial spin-momentum locked topological surface states (TSS). The electrical detection of spin-momentum locking of the TSS in 3D TIs has been lacking till very…
Magneto-thermal transport is a promising physical property for thermal management applications. Magneto-thermal switching enables active control of heat flows, and a high switching ratio is desirable for improving performance. Here, we…