Related papers: Fast high-power thyristors triggered in impact-ion…
Energy efficiency of optoelectronic switches based on high-voltage silicon photodiodes, phototransistors or photothyristors and triggered-on by picosecond laser pulses has been studied for the first time. For given values of resistive load,…
Transition edge sensors (TES) have the highest reported efficiencies (>98%) for detection of single photons in the visible and near infrared. Experiments in quantum information and foundations of physics that rely critically on this…
Development of energy-efficient fast cycling accelerator magnets is critical for the next generation of proton rapid cycling synchrotrons (RCS) for neutrino research and booster accelerators of future muon colliders. We see a unique…
The CMS detector will be upgraded for the HL-LHC to include a MIP Timing Detector (MTD). The MTD will consist of barrel and endcap timing layers, BTL and ETL respectively, providing precision timing of charged particles. The BTL sensors are…
Devices based on a pure spin current (a flow of spin angular momentum) have been attracting increasing attention as key ingredients for low-dissipation electronics. To integrate such spintronics devices into charge-based technologies, an…
A device and process strategy for achieving reliable indium gallium zinc oxide and indium oxide transistors compatible with a 400oC BEOL thermal budget and without performance degradation is demonstrated by fully exploiting intrinsic oxide…
Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be…
A pico-second timing (PIST) front-end electronic chip has been developed using $55~\mathrm{nm}$ CMOS technology for future electron-positron collider experiments (namely Higgs factories). Extensive tests have been performed to evaluate the…
While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lacking. In this paper, a comprehensive…
Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to…
Topological materials, such as topological insulators (TIs), have great potential for ultralow power spintronic devices, thanks to their giant spin Hall effect. However, the giant spin Hall angle (${\theta}_{SH}$ > 1) is limited to a few…
Here we report the discovery of superconductivity in multiple phases of the compressed GeSb2Te4 (GST) phase change memory alloy, which has attracted considerable attention for the last decade due to its unusual physical properties with many…
Materials able to rapidly switch between thermally conductive states by external stimuli such as electric or magnetic fields can be used as all-solid-state thermal switches and open a myriad of applications in heat management, power…
Two pulsed power systems have been upgraded for the g-2 experiment at Fermilab. The Pbar Lithium Lens supply previously ran with a half sine pulsed current of 75 kA peak, 400 us duration and a repetition rate of 0.45 pps. For the g-2…
We demonstrate the highest efficiency ($\sim$80%) second harmonic generation (SHG) of Joule level, 27 femtosecond, high contrast pulses in a type-I lithium triborate (LBO) crystal. In comparison, potassium dihydrogen phosphate (KDP) gives a…
Scaling of GaN high-electron-mobility transistors (HEMTs) usually increases gate leakage current and deteriorates breakdown characteristic, limiting the maximum drain current and output power density. These bottlenecks can be circumvented…
In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential…
Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
We have demonstrated a pressure-induced phase transition from a low-Tc phase to a high-Tc phase in a single crystal of the superconductor LaO0.5F0.5BiSe2. The high-Tc phase appears at 2.16 GPa and the maximum superconducting transition…