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Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the…
In this paper the methodology and the results of a quasi real-time thermal characterization tool and method for the temperature mapping of circuits and boards based on sensing the infrared radiation will be introduced. With the proposed…
The uncertainty of the ac Stark shift due to thermal radiation represents a major contribution to the systematic uncertainty budget of state-of-the-art optical atomic clocks. In the case of optical clocks based on trapped ions, the thermal…
Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge…
We demonstrate control over heat flow in an N-terminal molecular junction. Using simple model Hamiltonians we show that the heat current through two terminals can be tuned, switched, and amplified, by the temperature and coupling parameters…
In this work, we have implemented an accurate machine-learning approach for predicting various key analog and RF parameters of Negative Capacitance Field-Effect Transistors (NCFETs). Visual TCAD simulator and the Python high-level language…
Integrated circuits (ICs) that can operate at high temperature have a wide variety of applications in the fields of automotive, aerospace, space exploration, and deep-well drilling. Conventional silicon-based complementary…
Excess contributions to the free energy due to interfaces occur for many problems encountered in the statistical physics of condensed matter when coexistence between different phases is possible (e.g. wetting phenomena, nucleation, crystal…
Using Dynamical Mean Field Theory (DMFT) and Monte Carlo (MC) simulations, we study the ferromagnetic transition temperature Tc of a two-band model for Diluted Magnetic Semiconductors (DMS), varying coupling constants, hopping parameters,…
Quasiparticle injection devices are considered as one of the candidates for the high temperature superconductor transistors, which can operate at liquid nitrogen temperatures. In these devices the nonequilibrium effects are created by…
In this work, we characterize the radiation-induced damage in two thick, p-channel skipper-CCDs irradiated unbiased and at room temperature with 217-MeV protons. We evaluate the overall performance of the sensors and demonstrate their…
We report on the conductance from two-contact carrier injection in C60 single crystals. In the nonlinear regime, the current and voltage obey a power law, I \~ V^m, where m can be as high as 10 at room temperature. This nonlinear behavior -…
A methodology is presented for estimating average values for the temperature and the frictional traction over a tool-workpiece interface using measured values of force and torque applied to the tool. The approach was developed specifically…
The influence of nonequilibrium bulk conditions on the properties of the interfaces exhibited by a kinetic Ising--like model system with nonequilibrium steady states is studied. The system is maintained out of equilibrium by perturbing the…
We calculate second- and fourth-order cumulants of conserved charges in a temperature range stretching from the QCD transition region towards the realm of (resummed) perturbation theory. We perform lattice simulations with staggered quarks;…
In this study, a time fractional dual-phase-lag model with temperature jump boundary condition as a choice for the Fourier's law replacement in thermal modeling of transistors, is utilized. In more details, the numerical simulation of heat…
An interface connecting two distinct conformal field theories hosts rich critical behaviors. In this work, we investigate the entanglement properties of such critical interface theories for probing the underlying universality. As inspired…
Clockwise to anti-clockwise hysteresis crossover in current-voltage transfer characteristics of field effect transistors (FETs) with graphene and MoS$_2$ channels holds significant promise for non-volatile memory applications. However such…
We analyze the dynamics of two atoms with a short-ranged pair interaction in a one-dimensional harmonic trap with time-dependent frequency. Our analysis is focused on two representative cases: (i) a sudden change of the trapping frequency…
Nonlinear electrical properties of graphene-based three-terminal nanojunctions are presented. Intrinsic rectification of voltage is observed up to room temperature. The sign and the efficiency of the rectification can be tuned by a gate.…