Related papers: Modeling Interface Charge Traps in Junctionless FE…
Infrared hybridized detectors are widely used in astronomy, and their performance can be degraded by image persistence. This results in remnant images that can persist in the detector for many hours, contaminating any subsequent…
A comprehensive study of drain current dispersion effects in $\beta$-Ga$_2$O$_3$ FETs has been done using DC, pulsed and RF measurements. Both virtual gate effect in the gate-drain access region and interface traps under the gate are most…
Data for inelastic processes due to hydrogen atom collisions with manganese and titanium are needed for accurate modeling of the corresponding spectra in late-type stars. In this work excitation and charge transfer in low-energy Mn+H and…
Inspired by experimental observations related to electrolyte-gated transistors (EGTs) where non-ideals behaviors are shown and not described by just one theoretical model, we proposed a charge carriers transport model able to describe the…
A quantum system of N Coulomb charges confined within a harmonic trap is considered over a wide range of densities and temperatures. A recently described construction of an equivalent classical system is applied in order to exploit the…
The interface tension in the three-dimensional Ising model in the low temperature phase is investigated by means of the Monte Carlo method. Together with other physically relevant quantities it is obtained from a calculation of time-slice…
A chain with random hydrophobic-hydrophilic charges is studied in the presence of an interface separating a polar from a non polar solvent. Within a Gaussian variational approach in replica space, a transition is found, from a high…
We present a simple one-dimensional trapping model prompted by the problem of ion current across biological membranes. The trap is modeled mimicking the ionic channel membrane behaviour. Such voltage-sensitive channels are open or closed…
Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict the electric field within wide-bandgap semiconductors. The issue is the daunting number of bulk charge-trap candidates which means the treatment of bulk…
This paper analyzes a transient method for the characterization of low-resistance thermal interfaces of microelectronic packages. The transient method can yield additional information about the package not available with traditional static…
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state. The origin of the gate current variations…
We present a thermodynamic theory of plane coherent solid-solid interfaces in multicomponent systems subject to nonhydrostatic mechanical stresses. The interstitial and substitutional chemical components are treated separately using…
Event-by-event \gamma-charge correlation is used in studying systems going through QCD chiral phase transition. In this paper various methods for measuring \gamma-charge correlation in heavy ion collisions have been discussed. Dynamical…
We consider a multiple tunneling process into a quantum dot capacitively coupled to a dissipative environment. The problem is mapped onto an anisotropic Kondo model in its Coulomb gas representation. The tunneling barrier resistance and the…
Graphene is believed to be an excellent candidate material for next-generation electronic devices. However, one needs to take into account the nontrivial effect of metal contacts in order to precisely control the charge injection and…
We present a thorough analysis of the electronic detection of charged particles, confined in a Penning trap, via image charges induced in the trap electrodes. Trapping of charged particles in an electrode structure leads to frequency…
The electronic properties of interfaces between two different solids can differ strikingly from those of the constituent materials. For instance, metallic conductivity, and even superconductivity, have been recently discovered at interfaces…
Inter-terminal capacitances (ITCs) have major influence on the dynamic performance of power SiC MOSFETs. Knowledge of the exact values for the ITCs is required in order to perform accurate and predictive compact model simulations of their…
Thermal fracture is prevalent in many engineering problems and is one of the most devastating defects in metal additive manufacturing. Due to the interactive underlying physics involved, the computational simulation of such a process is…
In liquid mixtures and other binary systems at low temperatures the pure phases may coexist, separated by an interface. The interface tension vanishes according to $\sigma = \sigma_0 (1 - T/T_c)^{\mu}$ as the temperature T approaches the…