Related papers: A Nanomagnetic Voltage-Tunable Correlation Generat…
Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel…
Spin-transfer torques (STTs) can be exploited in order to manipulate the magnetic moments of nanomagnets, thus allowing for new consumer-oriented devices to be designed. Of particular interest here are tuneable radio-frequency (RF)…
The magnetic tunnel junction (MTJ) is a backbone device for spintronics. Realizing next generation energy efficient MTJs will require operating mechanisms beyond the standard means of applying magnetic fields or large electrical currents.…
High-quality random numbers are very critical to many fields such as cryptography, finance, and scientific simulation, which calls for the design of reliable true random number generators (TRNGs). Limited by entropy source, throughput,…
Magnetic tunnel junctions (MTJs) are key elements in practical spintronics, enabling not only conventional tasks such as data storage, transmission, and processing but also the implementation of compute-in-memory processing elements,…
We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the switching performances. We show that the concurrent…
The feasibility of reservoir computing based on dipole-coupled nanomagnets is demonstrated using micro-magnetic simulations. The reservoir consists of an 2x10 array of nanomagnets. The static-magnetization directions of the nanomagnets are…
We report the possibility of achieving an order of magnitude reduction in the energy dissipation needed to write bits in perpendicular magnetic tunnel junctions (p-MTJs) by simulating the magnetization dynamics under a combination of…
A promising branch of neuromorphic computing aims to perform cognitive operations in hardware leveraging the physics of efficient and well-established nano-devices. In this work, we present a reconfigurable classifier based on a network of…
In this work, the effect of electrical coupling on stochastic switching of two in-plane superparamagnetic tunnel junctions (SMTJs) is studied, using experimental measurements as well as simulations. The coupling mechanism relies on the…
The desire to empower resource-limited edge devices with computer vision (CV) must overcome the high energy consumption of collecting and processing vast sensory data. To address the challenge, this work proposes an energy-efficient…
A P-N junction engineered within a Dirac cone system acts as a gate tunable angular filter based on Klein tunneling. For a 3D topological insulator with substantial bandgap, such a filter can produce a charge-to-spin conversion due to the…
We demonstrate a method to generate application-ready truly random bits from a magnetic tunnel junction driven by a Field-Programmable Gate Array (FPGA). We implement a real-time feedback loop that stabilizes the switching probability near…
Dynamics of coupled spin-torque oscillators can be exploited for non-Boolean information processing. However, the feasibility of coupling large number of STOs with energy-efficiency and sufficient robustness towards parameter-variation and…
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…
The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating…
This work presents an equivalent circuit model for Magnetic Tunnel Junctions (MTJs) that accurately captures their magnetization dynamics and electrical behavior. Implemented in LTspice, the model is validated against direct numerical…
This paper describes a robust, modular, and physics- based circuit framework to model conventional and emerging Magnetic Tunnel Junction (MTJ) devices. Magnetization dynamics are described by the stochastic Landau-Lifshitz-Gilbert (sLLG)…
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…
Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that…