Related papers: Spin Logic Devices via Electric Field Controlled M…
We show that the established physics of spin valves together with the recently discovered giant spin-Hall effect could be used to construct Read and Write units that can be integrated into a single spin switch with input-output isolation,…
All-spin-based computing combining logic and nonvolatile magnetic memory is promising for emerging information technologies. However, the realization of a universal spin logic operation representing a reconfigurable building block with…
Current-induced magnetization switching by spin-orbit torque (SOT) holds considerable promise for next generation ultralow-power memory and logic applications. In most cases, generation of spin-orbit torques has relied on an external…
We propose a novel scheme to efficiently polarize and manipulate the electron spin in a quantum dot. This scheme is based on the spin-orbit interaction and it possesses following advantages: (1) The direction and the strength of the spin…
We suggest coherent switching of canted antiferromagnetic (AFM) spins using spin-orbit torque (SOT) in small magnet. The magnetic system of orthoferrite features biaxial easy anisotropy and the Dzyaloshinskii Moriya interaction, which is…
In this paper we discuss the potential of emerging spintorque devices for computing applications. Recent proposals for spinbased computing schemes may be differentiated as all-spin vs. hybrid, programmable vs. fixed, and, Boolean vs.…
Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction)…
A new proposal is given for designing a non-volatile, completely spin logic device, that can be reprogrammed for different functional classical logical operations. We use the concept of bias driven spin dependent circular current and…
The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based…
The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show large discrepancy with experiments in studying the spin-orbit torque switching of…
Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific…
In this technical note, we address the comments on the energy estimates for Magnetoelectric Spin-orbit (MESO) Logic, a new logic device proposed by the authors. We provide an analytical derivation of the switching energy, and support it…
Nonlocal spin polarization phenomena are thoroughly investigated in the devices made of chiral metallic single crystals of CrNb$_3$S$_6$ and NbSi$_2$ as well as of polycrystalline NbSi$_2$. We demonstrate that simultaneous injection of…
Magnetization switching by current-induced spin-orbit torques (SOTs) is of great interest due to its potential applications for ultralow-power memory and logic devices. In order to be of technological interest, SOT effects need to switch…
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies.…
It has been demonstrated that the switching of perpendicular magnetization can be achieved with spin orbit torque (SOT) at an ultrafast speed and low energy consumption. However, to make the switching deterministic, an undesirable magnetic…
We identify hexagonal YMnO$_3$ as a material realization of the elusive $\beta$-phase of unconventional magnetism, a noncollinear, noncoplanar antiferromagnetic state defined by intrinsic spin-momentum locking and a topological spin…
Controlling magnetism through non-magnetic means is highly desirable for future electronic devices, as such means typically have ultra-low power requirements and can provide coherent control. In recent years, great experimental progress has…
A new magnetic logic overcomes the major limitations of field programmable gate arrays while having a 50% smaller unit cell than conventional designs utilizing magnetic tunnel junctions with one Heusler alloy electrode. These show positive…
In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for developing next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is…