Related papers: Spin Logic Devices via Electric Field Controlled M…
Voltage control effects provide an energy-efficient means of tailoring material properties, especially in highly integrated nanoscale devices. However, only insulating and semiconducting systems can be controlled so far. In metallic…
Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy-efficiency. It is of particular interest to develop an SOT-MRAM device…
Electric-field control of spin-dependent properties has become one of the most attractive phenomena in modern materials research due the promise of new device functionalities. One of the paradigms in this approach is to electrically toggle…
Altermagnets, with spin splitting and vanishing magnetization, have been attributed to many fascinating phenomena and potential applications. In particular, integrating ferroelectricity with altermagnetism to enable magnetoelectric coupling…
The conversion of spin information into electrical signals is indispensable for spintronic technologies. Spin-to-charge conversion in ferromagnetic tunnel contacts is well-described using linear (spin-)transport equations, provided that…
It has recently been shown that electronic transport in zigzag graphene nanoribbons becomes spin-polarized upon application of an electric field across the nanoribbon width. However, the electric fields required to experimentally induce…
The photon spin is an important resource for quantum information processing as is the electron spin in spintronics. However, for subwavelength confined optical excitations, polarization as a global property of a mode cannot be defined.…
While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility to do it electrically. In the 1990s, Slonczewzki and Berger…
We study the spin-dependent magneto conductance in mesoscopic rings subject to an inhomogeneous in-plane magnetic field. We show that the polarization direction of transmitted spin-polarized electrons can be controlled via an additional…
Employing electron spin instead of charge to develop spintronic devices holds the merits of low-power consumption in information technologies. Meanwhile, the demand for increasing speed in spintronics beyond current CMOS technology has…
On-demand spin orientation with long polarized lifetime and easily detectable signal is an ultimate goal for spintronics. However, there still exists a trade-off between controllability and stability of spin polarization, awaiting a…
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is…
Electrical switching of magnetization via spin-orbit torque (SOT) is of great potential in fast, dense, energy-efficient nonvolatile magnetic memory and logic technologies. Recently, enormous efforts have been stimulated to investigate…
Electric-field driven magnetization switching in FePt/BaTiO$_3$ (001) is demonstrated through first-principles calculations. The magnetic easy axis of FePt layer undergoes a transition from in-plane to perpendicular direction upon…
We examine the possibility of using graphene nanoribbons (GNRs) with directly substituted chromium atoms as spintronic device. Using density functional theory, we simulate a voltage bias across a constructed GNR in a device setup, where a…
We propose a spin valve device based on the interplay of a modulated spin-orbit interaction and a uniform external magnetic field acting on a quantum wire. Half-metal phases, where electrons with only a selected spin polarization exhibit…
Antiferromagnetic materials have a vanishingly small net magnetization, which generates weak dipolar fields and makes them robust against external magnetic perturbation and rapid magnetization dynamics, as dictated by the geometric mean of…
Spintronic devices are a promising beyond-CMOS device option thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multi-physics dynamics, a rigorous treatment of both spin and charge and their…
A major challenge in spin-based electronics is reducing power consumption for magnetization switching of ferromagnets, which is being implemented by injecting a large spin-polarized current. The alternative approach is to control the…
We investigated a possible use of the magnonic interferometric switches in multi-valued logic circuits. The switch is a three-terminal device consisting of two spin channels where input, control, and output signals are spin waves. Signal…