Related papers: InAs quantum dot in a needlelike tapered InP nanow…
We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission…
Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs)…
A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy is reported. We develop an effective and mask-free method…
Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si…
We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth…
InAs semiconductor quantum dots (QDs) emitting in the near infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization of quantum-photonic nanodevices emitting in the second and…
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The…
Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However,…
Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers and for applications in quantum communication networks.…
Fiber-coupled single photon sources are essential components of photonics-based quantum information processors. Most fiber-coupled single photon sources require careful alignment between fibers and quantum emitters. In this work, we present…
Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated…
We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot…
We report on a platform for the production of single photon devices with a fabrication yield of 100%. The sources are based on InAsP quantum dots embedded within position-controlled bottom-up InP nanowires. Using optimized growth…
Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length…
Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emitting…
The development of deterministic single photon sources emitting in the telecommunication bands is a key challenge for quantum communication and photonic quantum computing. Here, we investigate the optical properties and single-photon…
The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology. Although significant advancement has been witnessed in recent years for single photon sources in near infrared…
The emission cascade of a single quantum dot is a promising source of entangled photons. A prerequisite for this source is the use of a symmetric dot analogous to an atom in a vacuum, but the simultaneous achievement of structural symmetry…
The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…
The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of InP(As) nanostructures…