Related papers: Electron-hole superfluidity controlled by a period…
In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$…
Gate-controllable two dimensional systems with in-plane modulation of properties could serve as highly tunable effective media. Intuitively, such systems may bring novel functionality provided that the period of the lateral modulation is…
We predict a new quantum electronic structure at the interface between two condensed phases of noble-gas elements: solid neon and superfluid helium. An excess electron injected onto this interface self-confines its wavefunction into a…
We outline here how strong light-matter interaction can be used to induce quantum phase transition between normal and topological phases in two-dimensional topological insulators. We consider the case of a HgTe quantum well, in which band…
We propose a scheme for realizing two-qubit quantum phase gates via an unconventional geometric phase shift with atoms in a cavity. In the scheme the atoms interact simultaneously with a highly detuned cavity mode and a classical field. The…
We present a way to manipulate an electron trapped in a layered quantum dot based on near-threshold properties of one-body potentials. We show that potentials with a simple global parameter allows the manipulation of the wave function…
We present a one-dimensional model which gives a novel physical interpretation to the specific state of an ensemble of electrons continuously injected into an electrostatic potential well immersed in a strong applied magnetic field…
It is shown that in a magnetic field the vortices in superfluid electron-hole systems carry a real electrical charge. The charge value depends on the relation between the magnetic length and the Bohr radiuses of electrons and holes. In…
We study theoretically the effect of an electric field on the electron states and far-infrared optical properties in narrow-gap lead salt quantum wells. The electron states are described by a two-band Hamiltonian. An application of a strong…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
We propose a method that can consecutively modulate the topological orders or the number of helical edge states in ultrathin film semiconductors without a magnetic field. By applying a staggered periodic potential, the system undergoes a…
We discuss a technique and a material system that enable the controlled realization of quantum entanglement between spin-wave modes of electron ensembles in two spatially separated pieces of semiconductor material. The approach uses…
In recent years systematic experimental studies of the temperature dependence of the resistivity in a variety of dilute, ultra clean two dimensional electron/hole systems have revived the fundamental question of localization or,…
Replacing independent single quantum wells inside a strongly-coupled semiconductor microcavity with double quantum wells produces a special type of polariton. Using asymmetric double quantum wells in devices processed into mesas allows the…
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…
We report on the achievement of a two-dimensional electron gas in completely undoped In[0.75]Al[0.25]As/In[0.75]Ga[0.25]As metamorphic quantum wells. Using these structures we were able to reduce the carrier density, with respect to…
Single-layer quantum dot gate potential causes type-II band alignment, i.e. electrostatically confines holes and repels electrons, or vice versa. Hence, the confinement of excitons in gated type II quantum dots involves a delicate balance…
Studies of different experimental groups that explore the properties of a two-dimensional electron gas in silicon semiconductor systems ((100) Si metal-oxide-semiconductor field-effect transistors (MOSFETs) and (100) SiGe/Si/SiGe quantum…
In this work, we investigate the conduction properties of strongly interacting fermions flowing through a quasi two-dimensional, multimode channel, which connects two atomic reservoirs. The atomic current in the channel is controlled using…
Two-dimensional electron gas coupled to adjacent impurity sites in high-frequency out-of-plane ac control electric field is investigated. Modification of tunneling rates as a function of the field amplitude is calculated. Nonlinear…