Related papers: Field Emission Characterization of MoS2 Nanoflower…
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope…
We fabricate AlGaN nanowires by molecular beam epitaxy and we investigate their field emission properties by means of an experimental setup using nano-manipulated tungsten tips as electrodes, inside a scanning electron microscope. The…
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated…
Electron field emission characteristics of individual multiwalled carbon nanotubes have been investigated by a piezoelectric nanomanipulation system operating inside a scanning electron microscopy chamber. The experimental setup ensures a…
Multiwalled carbon nanotubes have been produced by ethylene catalytic chemical vapor deposition and used to fabricate thick and dense freestanding films ("buckypapers") by membrane filtering. Field emission properties of buckypapers have…
Metallic cantilever in high vacuum atomic force microscope has been used as anode for field emission experiments from densely packed vertically aligned multi-walled carbon nanotubes. The high spatial resolution provided by the scanning…
We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good…
Nanocomposites based on graphene and carbon nanotubes dispersed in polypyrrole or poly(3,4ethylenedioxy)thiophene have been prepared and their performance as cold cathodes for field emission has been evaluated. It was found that the polymer…
In the quasi-planar approximation of field emission, the potential energy due to an external electrostatic field $E_0$ is expressed as $-e \gamma E_0 \Delta s$ where $\Delta s$ is the perpendicular distance from the emission site and…
We report observation of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements are realized inside a scanning electron microscope chamber with nano-controlled tungsten tip functioning as anode. Experimental…
Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the…
We report on the fabrication and characterization of synthesized multiwall MoS2 nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS2 NTs and NRs were grown by chemical transport, using iodine as a transport agent.…
We report on the application of Atomic Force Microscopy (AFM) for studying the Field Emission (FE) properties of a dense array of long and vertically quasi-aligned multi-walled carbon nanotubes grown by catalytic Chemical Vapor Deposition…
We report the observation and characterization of field emission current from individual single- and few-layer graphene flakes laid on a flat SiO2/Si substrate. Measurements were performed in a scanning electron microscope chamber equipped…
A power efficient and stable field emission (FE) has been reported here from Nickel Oxide nanostructures. Modification in device geometry and surface micro- (nano-) structure has been found helpful in addressing the bottlenecks in achieving…
Synthesis of monolayer MoS2 is essential for fulfilling the potential of MoS2 in catalysis, optoelectronics and valleytronics, etc. Herein, we report for the first time the scalable growth of high quality, domain size tunable (edge length…
Modern electron microscopy and spectroscopy is a key technology for studying the structure and composition of quantum and biological materials in fundamental and applied sciences. High-resolution spectroscopic techniques and…
We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) from 2 {\mu}m down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident…
The electron field emission of patterned films of nitrogenated carbon nanotubes is shown to be decisively influenced by the deposition conditions. The growth was carried out by decomposing methane in a nitrogen/ammonia atmosphere using hot…
We produce 120 um thick buckypapers from aligned carbon nanotubes. Transport characteristics evidence ohmic behavior in a wide temperature range, non linearity appearing in the current-voltage curves only close to 4.2 K. The temperature…