Related papers: Strain analysis of Ge micro disk using precession …
The current work describes a novel method of growing thin films of stable crystalline ST12-Ge, a high pressure polymorph of Ge, on Si substrate by a non-equilibrium VLS-technique. The study explores the scheme of band engineering of ST12-Ge…
We present a theoretical analysis of the role that strain plays on the electronic structure of chromium nitride crystals. We use LSDA+U calculations to study the elastic constants, deforma- tion potentials and strain dependence of electron…
Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to…
In this paper, we mainly present a new simple, efficient and nondestructive Raman scattering analysis method to study the distribution of strain in SiGe alloy films. The method can simultaneously determine both Ge fractional composition x…
The concept of compressive sensing was recently proposed to significantly reduce the electron dose in scanning transmission electron microscopy (STEM) while still maintaining the main features in the image. Here, an experimental setup based…
We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 meV per percent applied strain for direct gap transitions,…
With the decreasing sizes of integrated-circuit components, the semiconductor industry is in growing need of high-throughput strain mapping techniques that offer high precision and spatial resolution, with desired industry goals of…
The robust approach for real-time analysis of the scanning transmission electron microscopy (STEM) data streams, based on the ensemble learning and iterative training (ELIT) of deep convolutional neural networks, is implemented on an…
We present a few recent developments in the field of electron backscatter diffraction (EBSD). We highlight how open source algorithms and open data formats can be used to rapidly to develop microstructural insight of materials. We include…
The traditional techniques for extracting polycrystalline grain structures from microscopy images, such as transmission electron microscopy (TEM) and scanning electron microscopy (SEM), are labour-intensive, subjective, and time-consuming,…
We report the observation of the steering of 855 MeV electrons by bent silicon and germanium crystals at the MAinzer MIkrotron. 15 $\mu $m long crystals, bent along (111) planes, were exploited to investigate orientational coherent effects.…
The influence of tensile strain in the ab-plane on crystal and electronic structure of FeTe has been studied ab initio. In superconducting FeSe the Fermi surface nesting with a vector q~(0.5,0.5)(2\pi /a) is believed to be crucial for…
Electrostatic gating offers elegant ways to simultaneously strain and dope atomically thin membranes. Here, we report on a detailed \textit{in situ} Raman scattering study on graphene, suspended over a Si/SiO$_2$ substrate. In such a…
Strain engineering is a very effective method to tune electronic, optical, topological and thermoelectric properties of materials. In this work, we systematically study biaxial strain dependence of electronic structures and thermoelectric…
We consider a method for neutron residual strain/stress analysis combining features of transmission strain tomography (e.g. through Braggs edge imaging) and neutron diffraction techniques. Analogous to transmission strain tomography, our…
We have addressed the existing ambiguity regarding the effect of process-induced strain in the underlying GaN layer on AlGaN/GaN heterostructure properties. The bandgaps and offsets for AlGaN on strained GaN are first computed using a cubic…
4D-STEM-based orientation and phase mapping has enabled rapid microstructure quantification that can be directly combined with standard TEM- and STEM-based imaging modes. Typically, orientation mapping is coupled with beam precession (i.e.…
The study of thin films and 2D materials, including transition metal dichalcogenides such as WSe$_2$ offers opportunities to leverage their properties in advanced sensors, quantum technologies, and device to optimize functional performance.…
The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the graphene is examined. The ratio of primary diffraction spot…
Using nanoprobe X-ray diffraction microscopy, we investigate the relationship between residual strains from crystal growth in CsPbBr$_3$ thin film crystals, their stability, and local bandgap. We find that out-of-plane compressive strain…