Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

Zhongwei Pan; Richard Chin

Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

Materials Science 2007-05-23 v3

Authors: Zhongwei Pan , Richard Chin

Abstract

In this paper, we mainly present a new simple, efficient and nondestructive Raman scattering analysis method to study the distribution of strain in SiGe alloy films. The method can simultaneously determine both Ge fractional composition x and strain of SiGe films. We use the Ar+ laser lines (514.5, 488 and 457.9 nm) to detect the information of different depth of SiGe layers. The results show that the x value (about 0.50) of Si1-xGex and the strain of the films decrease from the interface between SiGe layers and Si substrates to SiGe surface.

Keywords

Raman scattering strain distribution SiGe alloy films Ge composition nondestructive analysis Ar+ laser

Cite

@article{arxiv.cond-mat/9905175,
  title  = {Application of Raman Scattering to Study the Strain Distribution in SiGe Layers},
  author = {Zhongwei Pan and Richard Chin},
  journal= {arXiv preprint arXiv:cond-mat/9905175},
  year   = {2007}
}

Comments

3 pages, 4 figures, 1 table

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