Related papers: Diode effect in the lateral spin valve
The superconducting equivalent of giant magnetoresistance, involves placing a thin-film superconductor between two ferromagnetic layers. A change of magnetization-alignment in such a superconducting spin-valve from parallel (P) to…
Spin injection and detection in Co60Fe40-based all-metallic lateral spin-valves have been studied at both room and low temperatures. The obtained spin signals amplitudes have been compared to that of identical Ni80Fe20-based devices. The…
We report unidirectional charge transport in a $\mathrm{NbSe_2}$ noncentrosymmetric superconductor, which is exchange-coupled with a $\mathrm{CrPS_4}$ van der Waals layered antiferromagnetic insulator. The $\mathrm{NbSe_2/CrPS_4}$ bilayer…
We have studied the dependence of the superconducting (SC) transition temperature on the mutual orientation of magnetizations of Fe1 and Fe2 layers in the spin valve system CoO_x/Fe1/Cu/Fe2/Pb. We find that this dependence is nonmonotonic…
We propose making light emitting diodes out of inverse spin valves. The proposed diodes rely on the spin-dependent electron transport of inverse spin valves that are layered structures of a ferromagnetic half-metal sandwiched between two…
The spin density matrix for spin-3/2 hole systems can be decomposed into a sequence of multipoles which has important higher-order contributions beyond the ones known for electron systems [R. Winkler, Phys. Rev. B \textbf{70}, 125301…
The exploitation of the spin in charge-based systems is opening revolutionary opportunities for device architecture. Surprisingly, room temperature electrical transport through magnetic nanowires is still an unresolved issue. Here, we show…
We present a theoretical study on the spin-dependent transport through a spin valve consisting of graphene sandwiched between two magnetic leads with an arbitrary orientation of the lead magnetization. No gate voltage is applied. Using…
Spin transport phenomena in solid materials suffer limitations from spin relaxation associated to disorder or lack of translational invariance. Ultracold atoms, free of that disorder, can provide a platform to observe phenomena beyond the…
We study transport in normal metals in an external magnetic field. This system exhibits an interplay between a transverse spin imbalance (spin Hall effect) caused by the spin-orbit interaction, a Hall effect via the Lorentz force, and spin…
An oscillographic study of the Hall voltage with an unpolarized alternating current through a platinum sample revealed choral features of the Hall effect, which clearly demonstrate the presence of the spin Hall effect in metals with a…
Electrical spin orientation is the generation of electron spin proportional to the electric current. This phenomenon is allowed by symmetry in gyrotropic systems, e.g. in inversion-asymmetric structures with Rashba spin-orbit splitting.…
We show that the nonreciprocity of hydrodynamic electron transport in noncentrosymmetric conductors with broken time-reversal symmetry (TRS) is significantly enhanced compared to the disorder-dominated regime. This enhancement is caused by…
The electrical creation and detection of spin accumulation in ferromagnet/semiconductor Schottky contacts that exhibit highly non-linear and rectifying electrical transport is evaluated. If the spin accumulation in the semiconductor is…
Non-uniform current distributions of spin valves with disk shaped free layers are investigated. In the context of spin valves, the vortex state, which is the ground-state in many disk shaped magnetic bodies, allows for distinct parallel…
We study the electrical injection and detection of spin accumulation in lateral ferromagnetic metal-nonmagnetic metal-ferromagnetic metal (F/N/F) spin valve devices with transparent interfaces. Different ferromagnetic metals, permalloy…
The intrinsic spin-Hall effect on spin accumulation and electric conductance in a diffusive regime of a 2D electron gas has been studied for a 2D strip of a finite width. It is shown that the spin polarization near the flanks of the strip,…
We present measurements of pure spin current absorption on lateral spin valves. By varying the width of the absorber we demonstrate that spin current absorption measurements enable to characterize efficiently the spin transport properties…
We show how the quantum Hall effect in an inverted-gap semiconductor (with electron- and hole-like states at the conduction- and valence-band edges interchanged) can be used to inject, precess, and detect the electron spin along a…
We present a general stochastic Liouville theory of electrical transport across a barrier between two conductors that occurs via sequential hopping through a single defect's spin-0 to spin-1/2 transition. We find magneto-conductances…