English

Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure

Superconductivity 2023-06-29 v2

Abstract

We report unidirectional charge transport in a NbSe2\mathrm{NbSe_2} noncentrosymmetric superconductor, which is exchange-coupled with a CrPS4\mathrm{CrPS_4} van der Waals layered antiferromagnetic insulator. The NbSe2/CrPS4\mathrm{NbSe_2/CrPS_4} bilayer device exhibits bias-dependent superconducting critical-current variations of up to 16%16\%, with the magnetochiral anisotropy reaching 105 T1A1\sim 10^5\mathrm{\ T^{-1}A^{-1}}. Furthermore, the CrPS4/NbSe2/CrPS4\mathrm{CrPS_4/NbSe_2/CrPS_4} spin-valve structure exhibits the superconducting diode effect with critical-current variations of up to 40%40\%. We also utilize the magnetic proximity effect to induce switching in the superconducting state of the spin-valve structure. It exhibits an infinite magnetoresistance ratio depending on the field sweep direction and magnetization configuration. Our result demonstrates a novel route for enhancing the nonreciprocal response in the weak external field regime (<50 mT<50\mathrm{\ mT}) by exploiting the magnetic proximity effect.

Keywords

Cite

@article{arxiv.2111.05627,
  title  = {Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure},
  author = {Jonginn Yun and Suhan Son and Jeacheol Shin and Giung Park and Kaixuan Zhang and Young Jae Shin and Je-Geun Park and Dohun Kim},
  journal= {arXiv preprint arXiv:2111.05627},
  year   = {2023}
}

Comments

25 pages, 3 figures, 2 supplemental figures