Related papers: Diode effect in the lateral spin valve
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…
The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…
We consider spin-polarized transport in a quantum spin Hall antidot system coupled to normal leads. Due to the helical nature of the conducting edge states, the screening potential at the dot region becomes spin dependent without external…
We report the successful fabrication of lateral organic spin valves with a channel length in the sub $100\,nm$ regime. The fabication process is based on in-situ shadow evaporation under UHV conditions and therefore yields clean and…
In this article we extend the currently established diffusion theory of spin-dependent electrical conduction by including spin-dependent thermoelectricity and thermal transport. Using this theory, we propose new experiments aimed at…
We derive diffusion equations, which describe spin-charge coupled transport on the helical metal surface of a three-dimensional topological insulator. The main feature of these equations is a large magnitude of the spin-charge coupling,…
A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as…
This review provides a comprehensive study of the nonlinear transport properties of magnons, which are electrically emitted or absorbed inside extended YIG films by spin transfer effects via a YIG$\vert$Pt interface. Our purpose is to…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
We present an extension to simple s-d models, aiming at simulating ultrafast magnetization dynamics and spin transport in metallic heterostructures. In particular, we consider an alternative spin dissipation channel due to a finite exchange…
Graphene is a promising substrate for future spintronics devices owing to its remarkable electronic mobility and low spin-orbit coupling. Hanle precession in spin valve devices is commonly used to evaluate the spin diffusion and spin…
Spin transport in graphene carries the potential of a long spin diffusion length at room temperature. However, extrinsic relaxation processes limit the current experimental values to 1-2 um. We present Hanle spin precession measurements in…
Angular variation of giant magnetoresistance and spin-transfer torque in metallic spin-valve heterostructures is analyzed theoretically in the limit of diffusive transport. It is shown that the spin-transfer torque in asymmetric spin valves…
We analyze the effect known as "spin current swapping" (SCS) due to electron-impurity scattering in a uniform spin-polarized two-dimensional electron gas. In this effect a primary spin current $J_i^a$ (lower index for spatial direction,…
It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the…
Realization of noncentrosymmetric magnetic Weyl metals is expected to exhibit anomalous transport properties stemming from the interplay of unusual bulk electronic topology and magnetism. Here, we present spin-valve-like magnetoresistance…
We predict that the magnetization direction of a ferromagnet can be reversed by the spin-transfer torque accompanying spin-polarized thermoelectric heat currents. We illustrate the concept by applying a finite-element theory of…
We show nonlocal spin transport in n-Ge based lateral spin-valve devices with highly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle-effect curves are demonstrated at low temperatures, indicating…
The spin Hall effect does not generally result in a charge Hall voltage. We predict that in systems with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect is instead accompanied by a…
We present a comprehensive quasiclassical approach for studying transport properties of superconducting diffusive hybrid structures in the presence of extrinsic spin-orbit coupling. We derive a generalized Usadel equation and boundary…