Related papers: Interface moment dynamics and its contribution to …
Magnetic tunnel junctions for spin-transfer torque switching were prepared to investigate the dielectric breakdown. The breakdown occurs typically at voltages not much higher than the switching voltages, a bottleneck for the implementation…
The switching dynamics of current-biased Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+\delta}$ intrinsic Josephson junctions (IJJs) was studied to clarify the effect of d-wave superconductivity and the stack structure on the switching properties. High…
We observe a series of discontinuities in the above gap current/voltage characteristics of highly transmissive Nb/Si superconductor/semiconductor interfaces. The bias at which each switch occurs decreases in quantized steps as a function of…
An experimental demonstration of a parametric oscillation of a magnetization in a ferromagnet was performed recently by applying a microwave voltage, indicating the potential to be applied in a switching method in non-volatile memories. In…
We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magnetic fields applied along the hard axis, we observe current…
We theoretically investigate the effect of transverse magnetic anisotropy on spin-flip assisted tunneling through atomic spin chains. Using a phenomenological approach and first-order perturbation theory, we analytically calculate the…
Voltage control of interfacial magnetism has been greatly highlighted in spintronics research for many years, as it might enable ultra-low power technologies. Among few suggested approaches, magneto-ionic control of magnetism has…
The tunneling of a giant spin at excited levels is studied theoretically in mesoscopic magnets with a magnetic field at an arbitrary angle in the easy plane. Different structures of the tunneling barriers can be generated by the…
Spin-transfer magnetic random access memory is of significant interest for cryogenic applications where a persistent, fast, low-energy consumption and high device density is needed. Here we report the low-temperature nanosecond duration…
We report single-shot measurements of resistance versus time for thermally assisted spin-torque-driven switching in magnetic tunnel junctions. We achieve sufficient sensitivity to resolve the resistance signals leading up to switching,…
The realistic modeling of STT-MRAM for the simulations of hybrid CMOS/Spintronics devices in comprehensive simulation environments require a full description of stochastic switching processes in state of the art STT-MRAM. Here, we derive an…
There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation.…
We address the electronically induced anisotropy field acting on a spin moment comprised in a vibrating magnetic molecule located in the junction between ferromagnetic metals. Under weak coupling between the electrons and molecular…
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…
We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also…
Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on…
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial…
We present a comparative study of high frequency dynamics and low frequency noise in elliptical magnetic tunnel junctions with lateral dimensions under 100 nm presenting current-switching phenomena. The analysis of the high frequency…
The dynamics of a spin torque driven ferrimagnetic (FiM) system is investigated using the two-sublattice macrospin model. We demonstrate an ultrafast switching in the picosecond range. However, we find that the excessive current leads to…
Inverse magnetoresistance has been observed in magnetic tunnel junctions with pinhole nanocontacts over a broad temperature range. The tunnel magnetoresistance undergoes a change of sign at higher bias and temperature. This phenomenon is…