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Frequency-selective or even frequency-tunable Terahertz (THz) photodevices are critical components for many technological applications that require nanoscale manipulation, control and confinement of light. Within this context, gate-tunable…
We have developed a detector which records the full polarisation state of a terahertz (THz) pulse propagating in free space. The three-electrode photoconductive receiver simultaneously records the electric field of an electromagnetic pulse…
In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs,…
The current (voltage) responsivity of the superlattice-based diode detectors in the terahertz frequency band which includes the region of the polar optical phonon frequencies has been analyzed theoretically. Within the framework of the…
We propose to utilize multiple-graphene-layer structures with lateral p-i-n junctions for terahertz (THz) and infrared (IR) photodetection and substantiate the operation of photodetectors based on these structures. Using the developed…
Terahertz microscopy has attracted attention owing to distinctive characteristics of the THz frequency region, particularly non-ionizing photon energy, spectral fingerprint, and transparency to most nonpolar materials. Nevertheless, the…
We study the use of a thermoelectric junction as a thermal radiation detector in the calorimetric regime, where single radiation bursts can be separated in time domain. We focus especially on the case of a large thermoelectric figure of…
Here, we isolate thin TiS3 ribbons, a layered direct band gap semiconductor (1.1 eV, well suited for detection all across the visible spectrum), thus far almost unexplored. We fabricate field effect transistors and study their electrical…
High-mobility field effect transistors can serve as resonant detectors of terahertz radiation due to excitation of plasmons in the channel. The modeling of these devices previously relied either on approximate techniques, or complex…
With increasing interest in high-speed imaging should come an increased interest in the response times of our scanning transmission electron microscope (STEM) detectors. Previous works have previously highlighted and contrasted performance…
Laser-induced Terahertz (THz) Emission Spectroscopy (TES) has demonstrated its potential utility in the realm of Metal-Oxide-Semiconductor (MOS) devices as an expedient and noncontact estimation methodology. Owing to its discerning response…
We analyze the two-dimensional electron gas (2DEG) heating by the incident terahertz (THz) radiation in the field-effect transistor (FET) structures with the graphene channels (GCs) and the black-phosphorus and black-arsenic gate barrier…
Time-resolved terahertz time-domain spectroscopy (THz-TDS) is an ideal tool for probing photoinduced nonequilibrium metallic and superconducting states. Here, we focus on the interpretation of the two-dimensional response function…
The emission properties of terahertz(THz) photoconductive antenna (PCA) have been numerically studied by three-dimensional finite-difference-time-domain method based on the full-wave model. The dependence of the THz radiation on various…
This paper presents a study on performance optimization and resonant frequency modification of terahertz detectors by the use of hyper-hemispherical silicon superstrate lenses. The detectors are patch-TeraFETs, i.e., field-effect…
We analyze the terahertz detection characteristics of resonant tunneling diodes (RTDs) using a set of simple equations that covers three detection modes; (i) direct detection, (ii) amplified detection, and (iii) self-homodyne (coherent)…
The fast detection of terahertz radiation is of great importance for various applications such as fast imaging, high speed communications, and spectroscopy. Most commercial products capable of sensitively responding the terahertz radiation…
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We…
We utilize the photoexcitation of a semiconductor material as a 'reflectivity switch' for a broadband terahertz field. We show that judicious use of this switch enables temporal characterization of the THz field with spatial resolution…
There has been a significant advancement in terahertz radiation sources in the past decade, making milliwatt terahertz power levels accessible in both continuous-wave and pulsed operation. Such high-power terahertz radiation sources…