Related papers: Radio-Frequency Polymer Field-Effect Transistors C…
We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices'…
We report the 1/f noise characteristics at low-frequency in graphene field-effect transistors that utilized a high-k dielectric tantalum oxide encapsulated layer (a few nanometers thick) placed by atomic layer deposition on Si3N4. A…
We developed means to produce wafer scale, high-quality graphene films as large as 3 inch wafer size on Ni and Cu films under ambient-pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We…
The development of flexible electronics operating at radio-frequencies (RF) requires materials that combine excellent electronic performance and the ability to withstand high levels of strain. In this work, we fabricate graphene…
This paper presents a study on performance optimization and resonant frequency modification of terahertz detectors by the use of hyper-hemispherical silicon superstrate lenses. The detectors are patch-TeraFETs, i.e., field-effect…
We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin…
The on-chip broadband optical spectrometers which cover the entire tissue transparency window ({\lambda}=650-1050 nm) with high resolution are highly demanded for the miniaturized bio-sensing and bio-imaging applications. Here, we propose a…
Chemical doping of bulk black phosphorus is a well-recognized way to reduce surface oxidation and degradation. Here, we report on the fabrication of terahertz frequency detectors consisting of an antenna-coupled field-effect transistor…
We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 KW…
A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the…
Strong electron-phonon interaction which limits electronic mobility of semiconductors can also have significant effects on phonon frequencies. The latter is the key to the use of Raman spectroscopy for nondestructive characterization of…
Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic…
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…
Contact resistances between organic semiconductors and metal electrodes have been shown to play a dominant role in electronic charge injection properties of organic field-effect transistors. These effects are more prevalent in short channel…
We present the fabrication and measurement of a radio frequency single electron transistor (rf-SET), that displays a very high charge sensitivity of 1.9 microlectrons/sqrt(Hz) at 4.2 K. At 40 mK, the charge sensitivity is 0.9 and 1.0…
The near-field radiative heat transfer (NFRHT) between one-dimensional metamaterials comprising phonon dielectric multilayers was experimented. Large sized (1cm x 1cm) near-field samples were fabricated using SiC, SiO2 and Ge layers at a…
The modulus spectra of organic field-effect transistors (OFETs) with electrode overlap and peripheral regions have been experimentally and theoretically investigated. The complex impedance of regioregular poly(3-hexylthiophene-2,5-diyl)…
We present estimates of the performance limits of terahertz detectors based on the field effect transistors (FET) in the regime of broadband detection. The maximal responsivity is predicted for short-channel FETs in the subthreshold regime.…
The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6].…
The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed…