Related papers: Effects of Interface Steps on the Valley Orbit cou…
Topologically protected edge states arise at the interface of two topologically distinct valley photonic crystals. In this work, we investigate how tailoring the interface geometry, specifically from a zigzag interface to a glide plane,…
We study the spin-valley Kondo effect of a silicon quantum dot occupied by $% \mathcal{N}$ electrons, with $\mathcal{N}$ up to four. We show that the Kondo resonance appears in the $\mathcal{N}=1,2,3$ Coulomb blockade regimes, but not in…
We study the few-electron eigenspectrum of a nanotube quantum dot with spin-orbit coupling. The two-electron phase diagram as a function of the length of the dot and the applied parallel magnetic field shows clear signatures of both…
The charge doped into a semiconductor in a field effect transistor (FET) is generally confined to the interface of the semiconductor. A planar step at the interface causes a potential drop due to the strong electric field of the FET, which…
Adiabatic shuttling of single impurity bound electrons to gate induced surface states in semiconductors has attracted much attention in recent times, mostly in the context of solid-state quantum computer architecture. A recent transport…
Conventional quantum transport methods can provide quantitative information on spin, orbital, and valley states in quantum dots, but often lack spatial resolution. Scanning tunneling microscopy, on the other hand, provides exquisite spatial…
The scalability of spin qubit devices is conditioned by qubit-to-qubit variability. Disorder in the host materials indeed affects the wave functions of the confined carriers, which leads to variations in their charge and spin properties.…
We report novel manifestation of the valley splitting for the two valley electron system in (100) Si-inversion layers at low carrier density. We found that valley splitting causes almost 100% modulation of the Shubnikov de Haas oscillations…
The magnetic properties of hole quantum dots in Ge are sensitive to their shape due to the interplay between strong spin-orbit coupling and confinement. We show that the split-off band, surrounding SiGe layers, and hole-hole interactions…
Silicon offers an attractive material platform for hardware realization of quantum computing. In this study, a microscopic stochastic simulation method is developed to model the effect of random interface charge traps in silicon…
In a full-scale quantum computer with a fault-tolerant architecture, having scalable, long-range interaction between qubits is expected to be a highly valuable resource. One promising method of achieving this is through the light-matter…
Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but…
Coherent interconnects between gate-defined silicon quantum processing units are essential for scalable quantum computation and long-range entanglement. We argue that one-dimensional electron channels formed in the silicon quantum well of a…
Electron flow through a quantum point contact in presence of spin-orbit coupling is investigated theoretically in the context of the scanning gate microscopy (SGM) conductance mapping. Although in the absence of the floating gate the…
The Spin-Orbit Proximity Effect is the raise of Spin-Orbit Coupling at a layer near to the interface with a strong spin-orbit material. It has been seen in several system such as graphene and ferromagnetic layers. The control of the…
The magnetization of semiconductor quantum dots in the presence of spin-orbit coupling and interactions is investigated numerically. When the dot is occupied by two electrons we find that a level crossing between the two lowest many-body…
The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored…
We explore a two-qubit system defined on valley isospins of two electrons confined in a gate-defined double quantum dot created within a MoS$_2$ monolayer flake. We show how to initialize, control, interact and read out such valley qubits…
We present a detailed study of the effects of interface spin-orbit coupling (ISOC) on the critical field behavior of non-centrosymmetric (NCS), ultra-thin superconducting Be/Au bilayers. Parallel field measurements were made in bilayers…
We present a scalable protocol for suppressing errors during electron spin shuttling in silicon quantum dots. The approach maps the valley Hamiltonian to a Landau-Zener problem to model the nonadiabatic dynamics in regions of small valley…