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Transport properties of Ce$_{0.85}$F0.15SbS$_{2}$ and undoped CeOSbS$_{2}$ under high pressure were investigated experimentally and theoretically. Electrical resistivity measurements of the Ce$_{0.85}$F0.15SbS$_{2}$ single crystals were…
Capacitance-voltage ($\textit{C-V}$) traces in n-type-(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage from positive to negative values, the system…
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state. The origin of the gate current variations…
The kagome lattice is host to flat bands, topological electronic structures, Van Hove singularities and diverse electronic instabilities, providing an ideal platform for realizing highly tunable electronic states. Here, we report soft- and…
We demonstrate an ionically gated planar PS-PV solar cell with ultra-thick fullerene ETL with a porous CNT electron collector on top of it. Perovskite photovoltaic devices usually have undoped electron transport layers, usually thin like…
We report on a capacitance study of dual gated bilayer graphene. The measured capacitance allows us to probe the electronic compressibility as a function of carrier density, temperature, and applied perpendicular electrical displacement D.…
The power synchronization control (PSC) has been increasingly used with voltage-source converters (VSCs) connected to the weak ac grid. This paper presents an in-depth analysis on the transient stability of the PSC-VSC by means of the phase…
In the present work we investigate the dielectric relaxation effects and charge trapping characteristics of HfO2 /Dy2O3 gate stacks grown on Ge substrates. The MOS devices have been subjected to constant voltage stress (CVS) conditions at…
The resistivity of polycrystalline chemical vapor deposition diamond sensors is studied in samples exposed to fluences relevant to the environment of the High Luminosity Large Hadron Collider. We measure the leakage current for a range of…
The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by…
Real-time stress evolution in a graphite-based lithium-ion battery negative-electrode during electrolyte wetting and electrochemical cycling is measured through wafer-curvature method. Upon electrolyte addition, the composite electrode…
Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge…
The tuning of electrical circuit resonance with a variable capacitor, or varactor, finds wide application with the most important being wireless telecommunication. We demonstrate an electromechanical graphene varactor, a variable capacitor…
Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative…
Power side-channel (PSC) attacks are well-known threats to sensitive hardware like advanced encryption standard (AES) crypto cores. Given the significant impact of supply voltages (VCCs) on power profiles, various countermeasures based on…
An insulator-to-metal transition is observed in trilayer graphene based on the temperature dependence of the resistance under different applied gate voltages. At small gate voltages the resistance decreases with increasing temperature due…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
The negative capacitance (NC) stabilization of a ferroelectric (FE) material can potentially provide an alternative way to further reduce the power consumption in ultra-scaled devices and thus has been of great interest in technology and…
Superconducting electronics represents a promising technology, offering not only efficient integration with quantum computing systems, but also the potential for significant power reduction in high-performance computing. Nonetheless, the…
Ever-growing electrical loads are having a huge impact on the operation and stability of the power system. Moreover, the integration of renewable generation poses various challenges to the future power system, especially, regarding…