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We study a system of two symmetrical capacitively coupled quantum dots, each coupled to its own metallic lead, focusing on its evolution as a function of the gate voltage applied to each dot. Using the numerical renormalization group and…
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for…
The gate-voltage-induced suppression of critical currents in metallic superconductors observed recently [De Simoni et al., Nat. Nanotechnol. 13, 802 (2018)] has raised crucial questions regarding the nature and mechanism of the electric…
Characteristic electrical curves of GaN HEMT devices from Infineon and Transphorm are compared at different X-ray radiation dose. It is shown that the device with pGaN gate is more robust having a stable threshold voltage (Vth). The Vth of…
Under external stimuli, lead halide perovskites exhibit large atomic fluctuations, impacting optical and electron transport properties that affect device performance in operational settings. However, a thorough understanding of the atomic…
In recent years systematic experimental studies of the temperature dependence of the resistivity in a variety of dilute, ultra clean two dimensional electron/hole systems have revived the fundamental question of localization or,…
Unconventional superconductivity in bilayer graphene has been reported for twist angles $\theta$ near the first magic angle and charged electrostatically with holes near half filling of the lower flat bands. A maximum superconducting…
Conductance-voltage characteristics (CVCs) for non-symmetric tunnel junctions between $d$-wave superconductors with charge-density waves (CDWs) and normal metals were calculated. It was shown that they have a V-like form at small voltages…
Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a…
Capacitors are typically connected together in one of two configurations: either in series, or in parallel. Here we study a capacitor-within-capacitor (CWC). Simulations and experiments indicate that the overall capacitance of the…
The output impedance matrices of three-phase grid-connected voltage source converters (VSCs) are widely used in power system stability analysis. Regardless of how the impedance is modeled, there always exist coupling terms in the impedance…
The gain of SiPMs depends both on bias voltage and on temperature. For stable operations, both need to be kept constant. In an ILC calorimeter with millions of channels, this is a challenging task. It is, therefore, desirable to compensate…
The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored…
We study the construction of programable integrated circuits with the help of disordered Chern insulators (CIs) in this letter. Specifically, the schemes for low dissipation logic devices and connecting wires are proposed. We use the…
Valence subband and transport properties of p-type metal-oxide-semiconductor (PMOS) inversion layer in uniaxially strained (110) and (111) Si channel have been studied theoretically in this work. Equal energy lines, carrier concentration…
We study theoretically an influence of the near-interfacial insulator traps and electron-hole puddles on the small-signal capacitance and conductance characteristics of the gated graphene structures. Based on the self-consistent…
We report the pressure-dependent optical reflectivity spectra of a strongly correlated insulator, samarium monosulfide (SmS), in the far- and middle-infrared regions to investigate the origin of the pressure-induced phase transition from…
We developed a theory of collective plasma oscillations in a dc current-biased field effect transistor with interdigitated dual grating gate and demonstrated a new mechanism of electron plasma instability in this structure. The instability…
The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute…
Negative capacitance can be used to overcome the lower limit of subthreshold swing (SS) in field effect transistors (FETs), enabling ultralow-power microelectronics, though the concept of ferroelectric negative capacitance remains…