Related papers: Gold/Parylene-C/Pentacene Capacitor under Constant…
The current-voltage characteristics (IVC) of $S-c-N$ point contacts of superconductors with a small coherence length ${{\xi}_{0}}$ reveal steps with discrete values of the differential resistance. This peculiarity is associated with a…
Fast charging of lithium-ion batteries is crucial to increase desirability for consumers and hence accelerate the adoption of electric vehicles. A major barrier to shorter charge times is the accelerated aging of the battery at higher…
A major concern associated to the massive connection of distributed energy resources is the increasing share of power electronic interfaces resulting in the global inertia reduction of power systems. The recent literature advocated the use…
Battery pack used in electrical vehicles (EVs) have developed fastly nowadays and are important due to its capability to stores electric charge. However, it is still found that there is an electrical voltage fluctuations due to sudden load…
Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained by self-consistent method using coupled Schrodinger- Poisson…
Gate controllable electronic trap detection method has been demonstrated by regulating the gate potential of MIS devices. This method is based on shift of capacitance voltage (CV) curve as well as flatband voltage (VFB) measure in less than…
The observation of room temperature sub-60 mV/dec subthreshold slope (SS) in MOSFETs with ferroelectric (FE) layers in the gate stacks or in series with the gate has attracted much attention. Recently, we modeled this effect in the…
Side-channel attacks exploit variations in non-functional behaviors to expose sensitive information across security boundaries. Existing methods leverage side-channels based on power consumption, electromagnetic radiation, silicon substrate…
Collective electron transport causes a weakly coupled semiconductor superlattice under dc voltage bias to be an excitable system with $2N+2$ degrees of freedom: electron densities and fields at $N$ superlattice periods plus the total…
In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/…
The heating of carriers in an intrinsic graphene under an abrupt switching off a dc electric field is examined taking into account both the energy relaxation via acoustic and optic phonons and the interband generation-recombination…
We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated…
Process-related and stress-induced changes in threshold voltage are major variability concerns in ultra-scaled CMOS transistors. The device designers consider this variability as an irreducible part of the design problem and use different…
Generating photogalvanic effects in centrosymmetric materials can provide new opportunities for developing passive photodetectors and energy harvesting devices. In this work, we investigate the photogalvanic effects in centrosymmetric…
We report real-time average stress measurements on composite silicon electrodes made with two different binders [Carboxymethyl cellulose (CMC), and polyvinylidene fluoride (PVDF)] during electrochemical lithiation and delithiation. During…
The temperature dependence of the Cs clock transition frequency in a vapor cell filled with Ne buffer gas has been measured. The experimental setup is based on the coherent population trapping (CPT) technique and a temporal Ramsey…
It is demonstrated that persistent-photoconductivity (PPC), well-studied in lightly-doped semiconductors, is observable in GeSbTe compounds using infrared excitation at cryogenic temperatures. The low level of energy-flux necessary to…
A 0.93 gram $1{\times}1{\times}0.4$ cm$^3$ SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. The detector's response under a…
The dynamic interplay between light and electric field control of charge states lies at the heart of developing multifunctional optoelectronic devices. While persistent photoconductivity (PPC) and gate-voltage (VG)-induced electron trapping…
We report, for CVD-grown monolayer MoS2, the very first results on temporal degradation of material and device performance under electrical stress. Both low and high field regimes of operation are explored at different temperatures, gate…