Related papers: Offset fields in perpendicularly magnetized tunnel…
We study the effects of a perpendicular magnetic field on the spin and charge distribution across a quantum wire. Using momentum resolved tunneling between two parallel wires we measure the dispersion relation for different perpendicular…
Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…
We have studied tunnel magnetoresistance (TMR) in junctions with 3d ferromagnetic electrodes. Previously we predicted that defects in the barrier would result in reduced effective polarization P of the impurity assisted current. This is…
We study the evolution of perpendicularly magnetized tunnel junctions under 300 to 400 $^{\circ}$C annealing. The hysteresis loops do not evolve much during annealing and they are not informative of the underlying structural evolutions.…
We study the dependence of perpendicular-current magnetoresistance in magnetic multilayers on the angle between the magnetizations of the layers. This dependence varies with the thickness of one of the layers, and is different for…
We study the effect of interlayer tunneling in the gauge theory describing a quasi-two-dimensional paramagnetic metal close to a second-order or weakly first-order antiferromagnetic phase boundary. In that theory, two species of fermions…
Single pulse All Optical Helicity-Independent Switching is demonstrated in an in-plane magnetized magnetic tunnel junction. A toggle switching of the 2nm thick Co40Fe40B20 soft layer could be achieved by exchange coupling the Co40Fe40B20…
The dynamical vortex response of a two-dimensional array of the resistively shunted Josephson junctions in a perpendicular magnetic field is inferred from simulations. It is found that, as the magnetic field is increased at a fixed…
The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic…
The impact of oxygen vacancies on local tunneling properties across rf-sputtered MgO thin films was investigated by optical absorption spectroscopy and conducting atomic force microscopy. Adding O$_2$ to the Ar plasma during MgO growth…
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…
We discuss a mesoscopic mechanism of exchange interaction in ferromagnet-normal metal-ferromagnet multilayers. We show that in the case when the metal's thickness is larger than the electron mean free path, the relative orientation of…
We proposed a novel multilayer structure to realize the deterministic switching of perpendicularly magnetized layers by spin orbital torque from the spin Hall effect through stray field engineering. In our design, a pinned magnetic layer is…
We investigate electron tunneling in AB bilayer graphene through a triple electrostatic barrier of heights $U_i (i=2,3,4)$ subjected to a perpendicular magnetic field. By way of the transfer matrix method and using the continuity conditions…
A new characteristic is observed in the training effect of perpendicular exchange bias. For Pt/Co/Pt/IrMn multilayers with perpendicular magnetic anisotropy, the magnetization reversal process is accompanied by pinned domain wall motion and…
We analyze the consequences resulting from the asymmetric boundary conditions imposed by a non-uniform external magnetic field at the extremities of a planar Josephson tunnel junction and predict a number of testable signatures. When the…
We study the magnetization dynamics in a ferromagnet-insulator-superconductor tunnel junction and the associated buildup of the electrical polarization. We show that for an open circuit, the induced voltage varies strongly and…
We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending…
We have found that the current rectification effect in triple layer (double barrier) (Ga,Mn)As magnetic tunnel junctions strongly depends on the magnetization alignment. The direction as well as the amplitude of the rectification changes…
We investigate the spin-transfer torque in a magnetic multilayer structure by means of a spin-diffusion model. The torque in the considered system, consisting of two magnetic layers separated by a conducting layer, is caused by a…