Related papers: Vacancy complexes in nonequilibrium germanium-tin …
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in…
The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 $^{\circ}$C and 850 $^{\circ}$C. Epitaxial growth of NiO(111) with two…
High germanium content silicon germanium (SiGe) epitaxy is critical for strain engineering in advanced gate all around (GAA) transistors. This paper demonstrates a physics guided exponential function model that quantitatively links…
Oxygen vacancies at the SnO2(110) and (101) surface and subsurface sites have been studied in the framework of density functional theory by using both all-electron Gaussian and pseudopotential plane-wave methods. The all-electron…
Purpose: 44Sc has been successfully produced, synthesized, labeled and first-in-human studies were conducted some years ago. The decay properties of 44Sc, together with being close to a clinical implementation, make it an ideal candidate…
The growth of high-composition GeSn films of the future will likely be guided via algorithms. In this study we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16 % on GaAs (001) substrates…
Molecular dynamics simulation is used to study vacancy cluster formation in $\beta$- and $\alpha$-$Si_3N_4$ with varying vacancy contents (0 - 25.6 at%). Vacancies are randomly created in supercells, which were subsequently heat-treated for…
The monolithic integration of extended short-wave infrared (e-SWIR) photodetectors (PDs) on silicon is highly sought-after to implement manufacturable, cost-effective sensing and imaging technologies. With this perspective, GeSn PIN PDs…
In many common Al-Mg-Si alloys (6000 series) intermediate storage at or near 'room temperature' after solutionising leads to pronounced changes of the precipitation kinetics during the ensuing artificial ageing step at \approx 180{\deg}C.…
Motivated by the success of group IV colour centres in nanodiamonds (NDs) for hybrid technology requiring a single photon source, we study single germanium-vacancy (GeV$^-$) centres in NDs at room temperature with size rangingfrom 10 to 50…
Defect engineering in two-dimensional semiconductors has been exploited to tune the optoelectronic properties and introduce new quantum states in the band gap. Chalcogen vacancies in transition metal dichalcogenides in particular have been…
Observations and modeling suggest that the dust abundance (gas-to-dust ratio, G/D) depends on (surface) density. The variations of the G/D provide constraints on the timescales for the different processes involved in the lifecycle of metals…
We investigate the distribution of bubble lifetimes and bubble lengths in DNA at physiological temperature, by performing extensive molecular dynamics simulations with the Peyrard-Bishop-Dauxois (PBD) model, as well as an extended version…
The characteristic timescale ($\tau$) of continuum variability of the accretion disk in active galactic nuclei (AGNs) is known to be related to the thermal timescale, which is predicted to scale with AGN luminosity ($L$) and restframe…
We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is…
Gray tin, also known as {\alpha}-Sn, has been attracting research interest recent years due to its topological nontrivial properties predicted theoretically. The Dirac linear band dispersion has been proved experimentally by angle resolved…
Gravitinos are a fundamental prediction of supergravity, their mass ($m_{G}$) is informative of the value of the SUSY breaking scale, and, if produced during reheating, their number density is a function of the reheating temperature…
We theoretically investigate the impact of the defect-limited carrier lifetime on the performance of germanium (Ge) light sources, specifically LEDs and lasers. For Ge LEDs, we show that improving the material quality can offer even greater…
Utilizing a combination of low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) and electronic structure calculations, we characterize the structural and electronic properties of single atomic vacancies within several…
Tailoring the degree of structural disorder in Ge-Sb-Te alloys is important for the development of non-volatile phase-change memory and neuro-inspired computing. Upon crystallization from the amorphous phase, these alloys form a cubic…