Related papers: Vacancy complexes in nonequilibrium germanium-tin …
We analyze the wavelength-dependent variability of a sample of spectroscopically confirmed active galactic nuclei (AGN) selected from near-UV ($NUV$) variable sources in the GALEX Time Domain Survey that have a large amplitude of optical…
We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses large excitation gaps in the fractional quantum Hall states…
The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy.…
The outstanding properties of high-purity germanium (HPGe) detectors, such as excellent energy resolution, high energy sensitivity, and a low background-to-signal ratio, make them essential and ideal candidates for detecting particle…
500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction,…
The local ordering of atoms in alloys directly has a strong impact on their electronic and optical properties. This is particularly relevant in nonrandom alloys, especially if they are deposited using far from the equilibrium processes, as…
The coevolution between supermassive black holes (SMBHs) and their host galaxies has been proposed for more than a decade, albeit with little direct evidence about black hole accretion activities regulating galaxy star formation at $z>1$.…
Interstitials and vacancies in the Abrikosov phase of clean Type II superconductors are line imperfections, which cannot extend across macroscopic equilibrated samples at low temperatures. We argue that the entropy associated with line…
We present a comprehensive spectroscopic and variability-based characterisation of a sample of low-luminosity active galactic nuclei (AGNs) hosting low mass black holes, identified by $H\beta$ full width at half maximum (FWHM) $< 2200$ km…
The Ga vacancy mediated microstructure evolution of (Ga,Mn)As during growth and post-growth annealing is studied using a multi-scale approach. The migration barriers for the Ga vacancies and substitutional Mn together with their…
The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant…
Variability of active galactic nuclei (AGNs) has long been servicing as an essential avenue of exploring the accretion physics of black hole (BH). There are two commonly used methods for analyzing AGN variability. First, the AGN…
Using a method Raman of spectroscopy and considering a non-uniformity of allocation of vacancies in a monocrystal, it is shown that lines with the small intensity (caused by presence of vacancies) have a major intensity in the sample of a…
Temperature effects on the energetics of the 90-degree partial dislocation in silicon and germanium are investigated, using non-equilibrium methods to estimate free energies, coupled with Monte Carlo simulations. Atomic interactions are…
We present preliminary results on the metastable behavior of a nonequilibrium ferromagnetic system. The metastable state mean lifetime is a non-monotonous function of temperature; it shows a maximum at certain non-zero temperature which…
The formation and electronic properties of nitrogen-related defect complexes in $\beta-Ga_2O_3$ are investigated using first-principles calculations. Starting from the energetically favorable $N_{i9}-N_{OI}$ configuration, nitrogen atoms…
We examine the relationship between galaxies, supermassive black holes and AGN using a sample of 22,000 narrow-emission-line AGN drawn from a a sample of 122,000 galaxies from the Sloan Digital Sky Survey. We have studied how AGN host…
The present article describes the size induced changes in the structural arrangement of intrinsic defects present in chemically synthesized ZnO nanoparticles of various sizes. Routine X-ray diffraction (XRD) and Transmission Electron…
The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR)…
We are investigating the properties of vacancies in solid 4He with the exact zero temperature SPIGS method. Our aim is to study the possibility of phase--separation between vacancies and the perfect crystal. We find a significant…