Related papers: Vacancy complexes in nonequilibrium germanium-tin …
To gain insights into long-term Active Galactic Nuclei (AGN) variability, we analyze an AGN sample from the Sloan Digital Sky Survey (SDSS) and compare their photometry with observations from the Hyper Suprime-Cam survey (HSC) observed…
Ge_(1-x)Sn_x alloys have proved difficult to form at large x, contrary to what happens with other group IV semiconductor combinations. However, at low x they are typical examples of well-behaved substitutional compounds, which is desirable…
We report here a reexamination of the static properties of vacancies in GaAs by means of first-principles density-functional calculations using localized basis sets. Our calculated formation energies yields results that are in good…
The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6x10E20cm-3 are studied using positron annihilation spectroscopy and transmission electron microscopy…
Germanium Selenide (GeSe) is a van der Waals-bonded layered material with promising optoelectronic properties, which has been experimentally synthesized for 2D semiconductor applications. In the monolayer, due to reduced dimensionality and,…
Active galactic nucleus (AGN) feedback is expected to impact the amount of cold gas in galaxies by driving strong galactic winds, by preventing external gas inflows, or by changing the thermodynamical state of the gas. We use molecular gas…
Understanding thermal transport in 2D materials and especially in graphene is a key challenge for the design of heat management and energy conversion devices. The high sensitivity of measured transport properties to structural defects,…
Radiation from the blazar class of of active galactic nuclei (AGN) exhibits fast time variability which is usually ascribed to instabilities in the emission region near the central supermassive black hole. The variability time scale is…
We present a comparative study of the optical and material property dependences of VCSELs on Ge or GaAs substrate thicknesses and epitaxy process conditions. It was found that adjusting the Ge substrate thickness and optimizing the epitaxy…
Phosphorene, a puckered two-dimensional allotrope of phosphorus, has sparked considerable interest in recent years due to its potential especially for optoelectronic applications with its layer-number-dependant direct band gap and strongly…
We study the effect of various configurations of vacancies on the magnetic properties of graphene nanoflake (GNF) with screened realistic long-range electron interaction [T. O. Wehling, et. al., Phys. Rev. Lett. 106, 236805 (2011)] within…
Germanium-tin (GeSn) photodiodes potentiate a viable solution to integrate SWIR and extended SWIR detection technology into CMOS processing line. However, challenges in the growth of thick, high quality GeSn limit the device absorber…
Scaling wide-band-gap semiconductors to the ultrathin limit offers a transformative pathway for power electronics, with gallium nitride (GaN) representing a cornerstone material in this class. However, the operational resilience and…
We present results of kinetic lattice Monte Carlo (KLMC) simulations of substitutional arsenic diffusion in silicon mediated by lattice vacancies. Large systems are considered, with 1000 dopant atoms and long range \textit{ab initio}…
Ge$_{1-x}$Sn$_{x}$ alloys are a promising candidate material to realise direct-gap group-IV semiconductors for applications in Si-compatible electronic and photonic devices. Here, we present a combined theoretical and experimental analysis…
Thanks to its high refractive index contrast, band gap and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet…
Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum covering infrared to terahertz wavelengths. However, the…
We present the studies of magnetic properties of 2 MeV 4He+-irradiated GaN grown by metal-organic chemical-vapor deposition. Particle irradiation allowed controllable introduction of Ga-vacancy in the samples. The magnetic moments with…
Longevity of materials, especially alloys, is crucial for enhancing the sustainability and efficiency of various applications, including gas turbines. Jerky flow, also known as dynamic strain aging effect, can indeed have a significant…
Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applications in sensing and communication. To address this…