Related papers: Dielectric properties of strained NiO thin films

RF sputtered ZnO and Al:ZnO films are attractive transparent conductive oxides for fabrication of opto-electronic devices. In this paper we present efforts to control carrier concentration and mobility of ZnO/Al:ZnO thin films by…

We investigated the ferroelectric properties of strontium titanate (STO) thin films deposited on SrTiO3 (001) substrate with SrRuO3 electrodes. The STO layer was grown coherently on the SrTiO3 substrate without in-plane lattice relaxation,…

We report magneto-dielectric properties of partially B-site ordered monoclinic Tb2CoMnO6 double perovskite thin film epitaxially grown by metalorganic aerosol deposition technique. Transmission electron microscopy and electron energy loss…

Epitaxial (001)-, (118)-, and (104)-oriented Nd-doped Bi4Ti3O12 films have been grown by pulsed-laser deposition from a Bi4-xNdxTi3O12 (x=0.85) target on SrRuO3 coated single-crystal (100)-, (110)-, and (111)-oriented SrTiO3 substrates,…

The optical properties of Nd$_{0.7}$Sr$_{0.3}$MnO$_3$ thin films have been studied from 5 meV to 25 meV and from 0.25 eV to 3 eV, at temperatures from 15 K to 300 K and magnetic fields up to 8.9 T. A large transfer of spectral weight from…

We report the observation of strong electron dephasing in a series of disordered Cu$_{93}$Ge$_4$Au$_3$ thin films. A very short electron dephasing time possessing very weak temperature dependence around 6 K, followed by an upturn with…

Relaxor behavior and lattice dynamics have been studied for a single crystal of K$_{1-x}$Li$_x$TaO$_3$ $(x=0.05)$, where a small amount of a Ca impurity ($\sim 15$~ppm) was incorporated. The dielectric measurements revealed Debye-like…

The structural evolution of a polydomain ferroelectric Pb(Zr0.2Ti0.8)O3 film was studied by temperature dependent X-ray diffraction. Two critical temperatures were evidenced: T*=740K, corresponding to a change in the domain structure…

Room-temperature magnetoelectric multiferroicity has been observed in c-axis oriented GaFeO$_3$ thin films (space group $Pna2_1$), grown on economic and technologically important (100)Si substrates by pulsed laser deposition technique.…

Si doped ZnO thin films with Si concentrations ranging from 0.4 to 10 % have been grown by sequential pulsed laser deposition on sapphire substrates. The resistivity of the films first decreased from ~ 6.6x10-3 to 4.7x10-4 ohm-cm as the Si…

We report a novel method for depositing patterned dielectric layers with sub-micron features using atomic layer deposition (ALD). The patterned films are superior to sputtered or evaporated films in continuity, smoothness, conformality, and…

Biaxially textured LuNi2BC thin films with Tc up to 15.8 K and a residual resistivity ratio up to 15 have been prepared. The films were deposited on MgO(110) substrates using pulsed laser deposition from a stoichiometric target. Via the…

Dielectric relaxation and thermal expansion spectroscopy were made for thin polystyrene films in order to measure the temperature $T_{\alpha}$ corresponding to the peak in the loss component of susceptibility due to the $\alpha$-process and…

Ni thin films grown by thermal evaporation and sputtering under different deposition conditions are characterized for structural and morphological properties using X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques. XRD…

Infrared reflectance spectra of an epitaxial Bi2FeCrO6 thin film prepared by pulsed laser deposition on LaAlO3 substrate were recorded between 10 and 900 K. No evidence for a phase transition to the paraelectric phase was observed, but some…

Nanoindentation tests were performed at several temperatures (24 to 80degC) on one antiwear zinc dialkyl-dithiophosphate (ZDTP) tribofilm using a Nanoindenter XP (R) entirely set into a climatic chamber. Mechanical properties of the…

Here we report the evolution of Ni stress in electroplated Ni films and investigate its origins as a function of electroplating time. First, low stress 200-nm-thick Ti / 200-nm thick Ni seed layers are deposited onto Si (100) wafers via…

We report the low temperature growth of vertically aligned ZnO nanocolumns on Si substrates by using reactive radio frequency magnetron sputtering.High sputtering pressure combined with low substrate temperatures induce a pronounced self…

Pure rutile Co-doped TiO$_2$ films were fabricated successfully by the conventional pulsed laser deposition technique on silicon substrates from a ceramic target. Under the right fabrication conditions, Co concentration in the films could…

The present study describes a facile route of zinc oxide (ZnO) grows using the solution-dependent electrostatic spray deposition (ESD) method at temperatures ranging from 300 {\deg}C - 500 {\deg}C. In this work, zinc chloride (ZnCl2) was…