Related papers: MOSFET GIDL Current Variation with Impurity Doping…
We investigate the problem of identifying discontinuous doping profiles in semiconductor devices from data obtained by the stationary voltage-current (VC) map. The related inverse problem correspond to the inverse problem for the…
In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type…
We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n…
We report on measurements of the low temperature dependence of the magnetic penetration depth lambda_ab in several single crystals of La_2-xSr_xCuO_4, Bi_2Sr_2CaCu_2O_8 and YBa_2Cu_3O_6+x at various doping levels ranging from the under- to…
The diagrammatic formalism and transport equation are conventionally considered as separate but complementary techniques to tackle the impurity scattering effect. To compare with the previous studies from the gauge-invariant kinetic…
Graphene field-effect transistors are widely used for development of biosensors. However, certain fundamental questions about details of their functioning are not fully understood yet. One of these questions is the presence of gate…
The doping of semiconductor materials is a fundamental part of modern technology, but the classical approaches have in many cases reached their limits both in regard to achievable charge carrier density, as well as mobility. Modulation…
We report a combined theoretical and experimental study of electrical transport in weakly-coupled doped superlattices. Our calculations exhibit negative differential conductivity at sufficiently high electric fields for all dopings. In…
Compact modeling of inter-device radiation-induced leakage underneath the gateless thick STI oxide is presented and validated taking into account CMOS technology and hardness parameters, dose-rate and annealing effects, and dependence on…
We use the Local Density Approximation in combination with the Dynamical Mean Field Theory to investigate intermediate energy properties of the copper oxides. We identify coherent and incoherent spectral features that results from doping a…
Transient and steady state currents through dc-biased quantum impurity models beyond the linear response regime are of considerable interest, both from an experimental and a theoretical point of view. Here we present a new analytical…
In nanometer scaled CMOS devices significant increase in the subthreshold, the gate and the reverse biased junction band-to-band-tunneling (BTBT) leakage, results in the large increase of total leakage power in a logic circuit. Leakage…
We investigate velocity statistics of an impurity immersed in a uniform granular fluid. An analytic solution of the inelastic Maxwell model shows that a phase transition occurs in the cooling case. Light impurities have similar velocity…
In this paper, we have presented the impact of the gate leakage through thin gate dielectrics (SiO2 and high-\k{appa} gate dielectric) on the subthreshold characteristics of the tunnel field effect transistors (TFET) for a low operating…
The atomically precise placement of dopants in semiconductors using scanning tunneling microscopes has been used to create planar dopant-based devices, enabling the exploration of novel classical or quantum computing concepts, which often…
We propose and study theoretically a new mechanism of electron-impurity scattering in doped seminconductors with large dielectric constant. It is based upon the idea of \textit{vector} character of deformations caused in the crystalline…
Particle deposition in fully-developed turbulent pipe flow is quantified taking into account uncertainty in electric charge, van der Waals strength, and temperature effects. A framework is presented for obtaining variance-based sensitivity…
A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of…
Measurements of London penetration depth are a sensitive tool to study multi-band superconductivity and it has provided several important insights to the behavior of Fe-based superconductors. We first briefly review the "experimentalist -…
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between…