Related papers: Spin-transfer torques for domain walls in antiferr…
We theoretically investigate emergent impedance induced by domain-wall dynamics in antiferromagnets. Emergent impedance, arising from a combined action of spin-transfer torque and spinmotive force, was previously predicted and observed in…
Many future concepts for spintronic devices are based on the current-driven motion of magnetic domain walls through nanowires. Consequently a thorough understanding of the domain wall mobility is required. However, the magnitude of the…
According to the recent experiment by the Fert group, the velocity of domain wall motion in the spin valve ferromagnetic nanowires was almost doubly enhanced compared to the old value. In this work, we propose an additional torque model,…
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a…
We predict high-velocity magnetic domain wall (DW) motion driven by out-of-plane acoustic spin in surface acoustic waves (SAWs). We demonstrate that the SAW propagating at a 30-degree angle relative to the x-axis of a 128-degree Y-LiNbO3…
Within the s-d model description, we derive the current-driven spin torque in a ferromagnet, taking explicitly into account a spin-relaxing Caldeira-Leggett bath coupling to the s-electrons. We derive Bloch-Redfield equations of motion for…
Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient…
We theoretically study the spin dynamics in antiferromagnets (AFs)under the influence of an electric current. We identify two different sources of spin-transfer torques that stem from uniform (${\boldsymbol v}_n$) and staggered…
The switching speed and the write current required for spin-transfer-torque reversal of spintronic devices such as magnetic tunnel junctions (MTJ) currently hinder their wide implementation into memory and logic devices. This problem is…
The motion of simple domain walls and of more complex magnetic textures in the presence of a transport current is described by the Landau-Lifshitz-Slonczewski (LLS) equations. Predictions of the LLS equations depend sensitively on the ratio…
The growing demand for storage, due to big data applications, cannot be met by hard disk drives. Domain wall (DW) memory devices such as racetrack memory offer an alternative route to achieve high capacity storage. In DW memory, control of…
For prospective spintronics devices based on the propagation of pure spin currents, antiferromagnets are an interesting class of materials that potentially entail a number of advantages as compared to ferromagnets. Here, we present a…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
We investigate spin transport by thermally excited spin waves in an antiferromagnetic insulator. Starting from a stochastic Landau-Lifshitz-Gilbert phenomenology, we obtain the out-of-equilibrium spin-wave properties. In linear response to…
The recent experiment [Y. Wang et al., Science 366, 1125 (2019)] on magnon-mediated spin-transfer torque (MSTT) was interpreted in terms of a picture where magnons are excited within an antiferromagnetic insulator (AFI), by applying…
Spin-wave (SW) spectra have theoretically been studied in a thin film of a ferromagnet (FM) on a substrate from a paramagnet (PM) (an FM above the critical temperature) or from superconductor (SC). A spin wave propagating in the FM induces…
The interplay between spin reorientation and topological electronic structure in two-dimensional (2D) van der Waals (vdW) ferromagnets is central to understanding how magnetic anisotropy shapes charge transport. Although spin-reorientation…
Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current…
One fundamental obstacle to efficient ferromagnetic spintronics is magnetic precession, which intrinsically limits the dynamics of magnetic textures, We demonstrate that the domain wall precession fully vanishes with a record mobility when…
The dynamics of the domain wall (DW) in a biaxial ferromagnet interacting with a spin-polarized current are described by sine-gordon (SG) equation coupled with Gilbert damping term in this paper. Within our frame-work of this model, we…