Related papers: Spin-transfer torques for domain walls in antiferr…
Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…
Understanding the mechanism of spin switching in ferrimagnets via the excitation of THz pulses holds promise for future-generation magnetic memory devices. Such spin switching can be accomplished by the Zeeman torque exerted by the THz…
Antiferromagnetic spintronics offers the potential for higher-frequency operations and improved insensitivity to magnetic fields compared to ferromagnetic spintronics. However, previous electrical techniques to detect antiferromagnetic…
Spin-waves in antiferromagnets hold the prospects for the development of faster, less power-hungry electronics, as well as promising physics based on spin-superfluids and coherent magnon-condensates. For both these perspectives, addressing…
In spin-transfer torque (STT) for technological applications, the miniaturization of the magnet may reach the stage of requiring a fully quantum-mechanical treatment. We present an STT theory which uses the quantum macrospin ground and…
Domain walls in ferrimagnets and antiferromagnets behave as relativistic sine-Gordon solitons with the spin-wave group velocity setting the ultimate velocity of domain walls and speed of magnetic devices. While this relativistic regime has…
Within linear continuum theory, no magnetic texture can propagate faster than the maximum group velocity of its spin waves. Here we report a transient regime due to the appearance of additional antiferromagnetic textures that breaks the…
We investigate the spin transfer torque (STT) in the magnetic multilayer structures with micromagnetic simulations. We implement the STT contribution for the magnetic multilayer structures in addition to the Landau-Lifshitz-Gilbert (LLG)…
Spintronics, since its inception, has mainly focused on ferromagnetic materials for manipulating the spin degree of freedom in addition to the charge degree of freedom, whereas much less attention has been paid to antiferromagnetic…
Domain walls are the transition regions between two magnetic domains. These objects have been very relevant during the last decade, not only due to their intrinsic interest in the development of novel spintronics devices but also because of…
The spin transfer effect in ferromagnet-quantum dot (insulator)-ferromagnet Aharonov-Bohm (AB) ring system with Rashba spin-orbit (SO) interactions is investigated by means of Keldysh nonequilibrium Green function method. It is found that…
The exploitation of spin Berry phases to generate emergent fields for producing miniaturized and high-quality inductors has enjoyed considerable popularity among proponents of quantum technologies [Nature 586, 202 (2020)}]. Inspired by this…
For a long time, there have been no efficient ways of controlling antiferromagnets. Quite a strong magnetic field was required to manipulate the magnetic moments because of a high molecular field and a small magnetic susceptibility. It was…
We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and…
Spin currents can exert spin-transfer torques on magnetic systems even in the limit of vanishingly small net magnetization, as is the case for antiferromagnets. Here, we experimentally show that a spin-transfer torque is operative in a…
We present a theoretical study of spin-wave scattering by a twisted domain wall (DW) in a two-dimensional ferromagnet with easy-axis anisotropy. While the twisted DW generates an effective gauge field for spin waves, leading to a deflection…
Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (~THz) and higher packing density due to the absence of any…
We discover that the way spin-waves exert magnetic torques in multiferroic materials can cause not only domain wall motion, but also magnetization dynamics for homogeneous magnetization textures. Interestingly, the domain wall motion can be…
We present theoretical description of the precessional switching processes induced by simultaneous application of spin-polarized current and external magnetic field to antiferromagnetic component of the "pinned" layer. We found stability…
We predict a mechanism to controllably manipulate domain walls in kagome antiferromagnets via a single linearly polarized spin-wave source. We show by means of atomistic spin dynamics simulations of antiferromagnets with kagome structure…