Related papers: Clockless Spin-based Look-Up Tables with Wide Read…

A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is…

We show that the established physics of spin valves together with the recently discovered giant spin-Hall effect could be used to construct Read and Write units that can be integrated into a single spin switch with input-output isolation,…

The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…

The conventional LUT is redundant since practical functions in real-world benchmarks only occupy a small proportion of all the functions. For example, there are only 3881 out of more than $10^{14}$ NPN classes of 6-input functions occurring…

Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…

We present spintronic devices based hardware implementation of UNet for segmentation tasks. Our approach involves designing hardware for convolution, deconvolution, rectified activation function (ReLU), and max pooling layers of the UNet…

Ising spin model is considered as an efficient computing method to solve combinatorial optimization problems based on its natural tendency of convergence towards low energy state. The underlying basic functions facilitating the Ising model…

We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…

We characterize the nanosecond pulse switching performance of the three-terminal magnetic tunnel junctions (MTJs), driven by the spin Hall effect (SHE) in the channel, at a cryogenic temperature of 3 K. The SHE-MTJ devices exhibit…

By integrating the local voltage-controlled magnetic anisotropy (VCMA) effect, Dzyaloshinskii-Moriya interaction (DMI) effect, and spin-orbit torque (SOT) effect, we propose a novel device structure for field-free magnetic tunnel junction…

The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…

Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves…

Spintronic devices as alternatives to traditional semiconductor-based electronic devices attract considerable interest as they offer zero quiescent power, built-in memory, scalability, and reconfigurability. To realize spintronic logic…

As nanoelectronics approaches the nanometer scale, a massive effort is underway to identify the next scalable logic technology beyond Complementary Metal Oxide Semiconductor (CMOS) computing. Such computing technology needs to improve…

We propose a heterostructure device comprised of magnets and piezoelectrics that significantly improves the delay and the energy dissipation of an all-spin logic (ASL) device. This paper studies and models the physics of the device,…

In this paper, we introduce the first integrated circuit (IC) implementation of spatiotemporally modulated angular-momentum (STM-AM) biased magnetless circulators. The design is based on a modified current-mode topology which is less…

We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that…

Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer…

This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the…

Magnetic tunnel junctions (MTJs) are key elements in practical spintronics, enabling not only conventional tasks such as data storage, transmission, and processing but also the implementation of compute-in-memory processing elements,…