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The modern implementation of machine learning architectures faces significant challenges due to frequent data transfer between memory and processing units. In-memory computing, primarily through memristor-based analog computing, offers a…
We report a novel field-sensitive tunneling barrier by embedding C60 in SiO2 for nonvolatile memory applications. C60 is a better choice than ultra-small nanocrystals due to its monodispersion. Moreover, C60 provides accessible energy…
Typical large-scale recommender systems use deep learning models that are stored on a large amount of DRAM. These models often rely on embeddings, which consume most of the required memory. We present Bandana, a storage system that reduces…
We predict the probability of field induced nucleation (FIN) of conductive filaments across the nano-thin dielectric layers in memory and switching devices. The novelty of our analysis is that it deals with a dielectric layer of thickness…
This study introduces a novel AI microcontroller optimized for cost-effective, battery-powered edge AI applications. Unlike traditional single bit/cell memory configurations, the proposed microcontroller integrates zero-standby power weight…
The accelerating growth of global data generation demands data storage platforms that offer high capacity, long lifespan, and low energy consumption beyond the limits of electronic memory technologies. Optical storage provides an attractive…
The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in…
Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the N\'eel along different orientations. Variations of the…
We fabricate nanolayer alumina capacitor and apply high electric fields, close to 1 GV/m, to inject charges in the dielectric. Asymmetric charge distributions have been achieved due to the selectivity of the quantum tunneling process.…
Analog memory is of great importance in neurocomputing technologies field, but still remains difficult to implement. With emergence of memristors in VLSI technologies the idea of designing scalable analog data storage elements finds its…
The number of electrified powertrains is ever increasing today towards a more sustainable future; thus, it is essential that unwanted failures are prevented, and a reliable operation is secured. Monitoring the internal temperatures of…
Quantum memories capable of storing single photons are essential building blocks for quantum information processing, enabling the storage and transfer of quantum information over long distances. Devices operating at room temperature can be…
Parylene C thin films have significant applications in advanced packaging of microelectronics. Their thermal properties are critical for thermal management of electronic devices. However, a unified understanding of the tunable structure and…
In a multiprocessor system on chip (MPSoC) IC the processor is one of the highest heat dissipating devices. The temperature generated in an IC may vary with floor plan of the chip. This paper proposes an integration and thermal analysis…
As technology process node scales down, on-chip SRAM caches lose their efficiency because of their low scalability, high leakage power, and increasing rate of soft errors. Among emerging memory technologies, Spin-Transfer Torque Magnetic…
The 60 mV$/$decade subthreshold limit at room temperature, coined as the Boltzmann tyranny, remains a fundamental obstacle to the continued down-scaling of conventional transistors. While several strategies have sought to overcome this…
Fast polarization is crucial for the performance guarantees of polar codes. In the memoryless setting, the rate of polarization is known to be exponential in the square root of the block length. A complete characterization of the rate of…
Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature with a laser scribing process. The neuron transistors are composed of a bottom ITO floating gate and multiples of two…
We present electrical conductance measurements on amorphous NbSi insulating thin films. These films display out-of equilibrium electronic features that are markedly different from what has been reported so far in disordered insulators. Like…
The consistent demand for better performance has lead to innovations at hardware and microarchitectural levels. 3D stacking of memory and logic dies delivers an order of magnitude improvement in available memory bandwidth. The price paid…