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Boron (B) alloying transforms the magnetoelectric antiferromagnet Cr2O3 into a multifunctional single-phase material which enables electric field driven {\pi}/2 rotation of the N\'eel vector. Nonvolatile, voltage-controlled N\'eel vector…
Antiferromagnets (AFMs) are presently considered as promising materials for applications in spintronics and random access memories due to the robustness of information stored in AFM state against perturbing magnetic fields (P. Wadley et…
The effect of Sr doping in BaTiO3 (BTO) with nominal compositions Ba0.80Sr0.20TiO3 (BSTO) have been explored in its structural, lattice vibration, dielectric, ferroelectric and electrocaloric properties. The temperature dependent dielectric…
Artificial multiferroics consist of two types of ferroic materials, typically a ferroelectric and ferromagnet, often coupled interfacially by magnetostriction induced by the lattice elongations in the ferroelectric. In BaTiO3 the magnitude…
Flexible sensors made from organic bilayer films of molecular conductor on polymeric matrix have attracted many interest due to their simple fabrication with high potential for being scaled up, and for their high-performing…
This paper reports the fatigue and retention behavior for Al1-xBxN thin films, a member of the novel family of wurtzite ferroelectrics, with an emphasis on the role of capacitor architecture. By modifying the capacitor architecture, and…
BiFeO3 (BFO) multiferroic oxide has a complex phase diagram that can be mapped by appropriately substrate-induced strain in epitaxial films. By using Raman spectroscopy, we conclusively show that films of the so-called supertetragonal T-BFO…
We compare the behavior of the magnetothermoelectric power (MTEP)in metallic ferromagnetic thin films of Ni80Fe20 (Permalloy; Py), Co and CrO2 at temperatures in the range of 100 K to 400 K. In 25 nm thick Py films and 50 nm thick Co films…
Multiferroic perovskites that exhibit room temperature magnetization and polarization have immense potential in the next generation of magneto-electric and spintronic memory devices. In this work, the magnetic and ferroelectric properties…
The spin-momentum locking of surface states in topological quantum materials can produce a resistance that scales linearly with magnetic and electric fields. Such a bilinear magneto-electric resistance (BMER) effect offers a completely new…
Thin film ferroelectric devices with ultralow power operation, non-volatile data retention and fast and reliable switching are attractive for non-volatile memory and as synaptic weight elements. However, low thermal budget ferroelectric…
This research investigates the structural, topological, electrical and optical properties of pulsed laser deposited polycrystalline BiFeO3 thin films on silicon and glass substrate at varying deposition temperatures ranging from 400 degC to…
We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time. Atomic layer deposited (ALD) hafnium zirconium oxide (HZO) is used as the…
A Boltzmann machine whose effective "temperature" can be dynamically "cooled" provides a stochastic neural network realization of simulated annealing, which is an important metaheuristic for solving combinatorial or global optimization…
We present direct evidence of above room temperature magneto-electricity in single-phase Li0.05Ti0.02Ni0.93O with above-ambient antiferromagnetic ordering. Temperature-hysteresis in warming/cooling heat-flow thermograms establishes a…
We performed a computational analysis on percolation transport and filament formation in amorphous $Ge_2Sb_2Te_5$ (a-GST) using 2D finite-element multi-physics simulations with 2 nm out-of-plane depth using an electric-field and temperature…
We have studied ferroelectricity and photovoltaic effects in atomic layer deposited (ALD) 40-nm thick SnTiO$_{x}$ films deposited directly onto p-type (001)Si substrate. These films showed well-saturated, square and repeatable hysteresis…
Spectral ellipsometry studies of the optical functions, first observation of photoluminescence and low frequency dielectric permittivity investigations were performed in ferroelectric - multiferroic TbMnO3 single crystals. The main…
The magnetization as a function of magnetic field showed hysteretic behavior at room temperature. According to the temperature dependence of the magnetization, the Curie temperature $(T_{C})$ is higher than 350 K. Ferromagnetic Mn-doped tin…
It is crucial that magnetic memory devices formed from magnetic heterostructures possess sizable spin-orbit torque (SOT) efficiency and high thermal stability to realize both efficient SOT control and robust storage of such memory devices.…