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We report electrical, magnetic, magnetodielectric and magnetoabsorption properties of a polycrystalline GaFeO3. The resistivity measurement shows that the sample is highly insulating below 200 K and the resistivity above 200 K obey the…
We report for the first time, that Fe3Se4 is a room temperature, type-II multiferroic with magnetoelectric coupling. We observed the coexistence of coupled ferrimagnetic and ferroelectric ordering in Fe3Se4nanorods well above room…
Here we investigate epitaxial Hf0.5Zr0.5O2 ferroelectric thin films as potential candidates to be used as non-volatile electric-field-modulated thermal memories. The electric-field dependence of the thermal conductivity of…
It has been recently shown that the memory of multiple aging stages, a phenomenon considered possible only below the glass transition of some glassy systems, appears also above that temperature range in the relaxor ferroelectric…
The structural and polar properties of BiFeO3 at finite temperature are investigated using an atomistic shell model fitted to first-principles calculations. Molecular Dynamics simulations show a direct transition from the low-temperature…
We measured the temperature dependences of the capacity and dielectric losses of the tape-casted dense ferroelectric composites consisting of 28 vol.% BaTiO3 nanoparticles (average size 24 nm) in the polyvinyl butyral polymer and 35 vol.%…
LiNbO3 (LN) is renowned for its exceptional ferroelectric properties, particularly its notable linear electro-optical (EO) effect, which is highly advantageous for various applications such as high-speed communication, optical computation,…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties…
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies.…
We report on linear and non-linear dielectric property measurements of BaTiO3 - CoFe2O4 (BTO-CFO) ferroelectro-magnetic nano-composites and pure BaTiO3 and CoFe2O4 samples with Scanning Near Field Microwave Microscopy. The permittivity…
Simulating finite temperature phase transitions from first-principles is computationally challenging. Recently, molecular dynamics (MD) simulations using machine-learned force fields (MLFFs) have opened a new avenue for finite-temperature…
In the present work we describe a way to assess memory capability of real devices, while proposing to the engineering community what to pursue to create devices with deep associated memory capability. The study of the signal produced by a…
Photoresponsivity studies of wide-bandgap oxide-based devices have emerged as a vibrant and popular research area. Researchers have explored various material systems in their quest to develop devices capable of responding to illumination.…
Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to…
Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes (FeDs) are two-terminal NVM devices exhibiting rectifying…
Multiferroics are promising for sensor and memory applications, but despite all efforts invested in their research no single-phase material displaying both ferroelectricity and large magnetization at room-temperature has hitherto been…
This study presents the first experimental exploration into cryogenic ferroelectric behavior in wurtzite ferroelectrics. A breakdown field (EBD) to coercive field (EC) ratio of 1.8 is achieved even at 4 K, marking the lowest ferroelectric…
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…
Bismuth ferrite (BiFeO3) is one of the most promising multiferroics with a sufficiently high ferroelectric (FE) and antiferromagnetic transition temperatures, and magnetoelectric (ME) coupling coefficient at room temperature, and thus it is…
The magnetic susceptibility between 1.5 and 800 K, the infrared reflectivity at room temperature and the temperature dependence of the dielectric constant at mm-wavelengths are reported for single crystalline BiFeO3. A well developed…