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We report a systematic study of current-induced perpendicular magnetization switching in W/Co$_{x}$Tb$_{1-x}$/Al thin films with strong perpendicular magnetic anisotropy. Various Co$_{x}$Tb$_{1-x}$ ferrimagnetic alloys with different…

We report on the synthesis and characterization of BiFe0.5Mn0.5O3, a potential type-I multiferroic compound displaying temperature induced magnetization reversal. Bulk samples were obtained by means of solid state reaction carried out under…

We report here the observation of robust thermoremanent magnetization (TRM) in Fe-intercalated TaS$_2$ single crystal Fe$_{x}$TaS$_2$, which develops upon cooling under a moderate magnetic field of 500 Oe or higher. The thermoremanence is…

Spin-transfer torque magnetoresistive random access memory is a potentially transformative technology in the non-volatile memory market. Its viability depends, in part, on one's ability to predictably induce or prevent switching; however,…

Mesoscale and Nanoscale Physics · Physics 2019-10-02 YiMing Yu , Cyrill B. Muratov , Richard O. Moore

Thermal switching provides an effective way for active heat flow control, which has recently attracted increasing attention in terms of nanoscale thermal management technologies. In magnetic and spintronic materials, the thermal…

The temperature dependence of the response of a magnetic system to an applied field can be understood qualitatively by considering variations in the energy surface characterizing the system and estimated quantitatively with rate theory. In…

Mesoscale and Nanoscale Physics · Physics 2015-12-08 M. Moskalenko , P. F. Bessarab , V. M. Uzdin , Hannes Jónsson

Magnetic anisotropy plays an essential role in information technology applications of magnetic materials, providing a means to retain the long-term stability of a magnetic state in the presence of thermal fluctuations. Anisotropy consists…

Materials Science · Physics 2020-08-05 Richard F. L. Evans , Levente Rózsa , Sarah Jenkins , Unai Atxitia

A quantum thermal device based on three nearest-neighbor coupled spin-1/2 systems controlled by the magnetic field is proposed. We systematically study the steady-state thermal behaviors of the system. When the two terminals of our system…

Quantum Physics · Physics 2024-02-01 Yi-jia Yang , Yu-qiang Liu , Zheng Liu , Chang-shui Yu

Recent advances in nanoscale magnetism have demonstrated the potential for spin-based technology including magnetic random access memory, nanoscale microwave sources, and ultra-low power signal transfer. Future engineering advances and new…

Mesoscale and Nanoscale Physics · Physics 2015-02-24 J. M. Bartell , D. H. Ngai , Z. Leng , G. D. Fuchs

Thermal fluctuations of nanomagnets driven by spin-polarized currents are treated via the Landau-Lifshitz-Gilbert equation generalized to include both the random thermal noise field and the Slonczewski spin-transfer torque term. By…

Statistical Mechanics · Physics 2013-10-09 Y. P. Kalmykov , W. T. Coffey , S. V. Titov , J. E. Wegrowe , D. Byrne

Photo-Thermoelectric (PTE) response is usually one of the main working mechanisms for photodetectors. However, as another fast and easier way to measure thermoelectric characteristics of materials, it can also reveal important physics such…

Strongly Correlated Electrons · Physics 2023-05-17 Qiang Chen , Jialin Li , Huanfeng Zhu , Tian Zhang , Wei Tang , Hui Xing , Jin Peng , Zhiqiang Mao , Linjun Li

Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…

Materials Science · Physics 2015-05-13 P. Krzysteczko , G. Reiss , A. Thomas

Pr1-xCaxMnO3 (PCMO) based resistance random access memory (RRAM) is attractive in large scale memory and neuromorphic applications as it is non-filamentary, area scalable and has multiple resistance states along with excellent endurance and…

Applied Physics · Physics 2020-04-15 Sandip Lashkare , Udayan Ganguly

The spin torque assisted thermal switching of the single free layer was studied theoretically. Based on the rate equation, we derived the theoretical formulas of the most likely and mean switching currents of the sweep current assisted…

Mesoscale and Nanoscale Physics · Physics 2012-11-08 Tomohiro Taniguchi , Hiroshi Imamura

The dependence of thermally induced spontaneous magnetization reversal on time-dependent cooling protocols was studied. Slower cooling and longer waiting close to the N\`{e}el temperature of the antiferromagnet ($T_N$) enhances the…

Materials Science · Physics 2009-11-11 Zhi-Pan Li , Casey W. Miller , Igor V. Roshchin , Ivan K. Schuller

Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…

TmFeO$_3$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 K and 94 K in single crystals. In this temperature region, the N\'eel vector continuously rotates from the…

The transfer matrix method (TMM) is widely used to analyze the transport properties of one-dimensional or quasi-one-dimensional systems, such as nanostructures and layered materials in spintronics. However, its application in quantifying…

Mesoscale and Nanoscale Physics · Physics 2024-11-12 Qiang Kang , Chenguang Hu

Modulation of stress anisotropy of magnetostrictive nanomagnets with strain offers an extremely energy-efficient method of magnetization reversal. The reversal process, however, is often incoherent and hence error-prone in the presence of…

Mesoscale and Nanoscale Physics · Physics 2016-07-26 Md Mamun Al-Rashid , Supriyo Bandyopadhyay Jayasimha Atulasimha

The Y_0.5Ca_0.5BaCo_4O_7 compound exhibits four magnetic anomalies at the temperatures 387, 281, 52, and 14 K; all anomalies show characteristics typical for spin freezing into disordered states: frequency dependent transition temperature…

Strongly Correlated Electrons · Physics 2009-11-11 Martin Valldor