Related papers: Thermo-remnant magnetization assisted switching re…
Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier…
Multiferroic materials have undergone extensive research in the past two decades in an effort to produce a sizable room-temperature magneto-electric (ME) effect in either exclusive or composite materials for use in a variety of electronic…
Thermally-assisted ultra-fast magnetization reversal in a DC magnetic field for magnetic multilayer thin films with perpendicular anisotropy has been investigated in the time domain using femtosecond laser heating. The experiment is set-up…
We theoretically investigate tunneling magnetoresistance (TMR) devices, which are probing the spin-momentum coupled nature of surface states of the three-dimensional topological insulator Bi$_{2}$Se$_{3}$. Theoretical calculations are…
The prospect of all electrically controlled writing of ferromagnetic bits is highly desirable for developing scalable and energy-efficient spintronics devices. In the present work, we perform micromagnetic simulations to investigate the…
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…
We introduce a constrained Monte Carlo method which allows us to traverse the phase space of a classical spin system while fixing the magnetization direction. Subsequently we show the method's capability to model the temperature dependence…
The recent discovery of magnetic ordering in two-dimension has lead to colossal efforts to find atomically thin materials that order at high temperatures. However, due to fundamental spin fluctuation in reduced dimension, the…
We present a comprehensive study of the magnetic structure evolution across the spin reorientation transition in orthorhombic (Pnma) TmCrO3. Magnetic susceptibility reveals canted antiferromagnetic (CAFM) ordering at T_N = 125 K, two…
We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT),…
Thermoelectric effects in magnetic nanostructures and the so-called spin caloritronics are attracting much interest. Indeed it provides a new way to control and manipulate spin currents which are key elements of spin-based electronics. Here…
(BEDT-TTF)$_2$MHg(SCN)$_4$[M:K,Rb,Tl] shows typical two-dimensional angular dependent magnetoresistance oscillation (ADMRO) at high temperature (T$>$8K), but at lower temperature it shows anomalously large magnetoresistance, and the ADMRO…
The dynamical theory of thermally activated resonant magnetization tunneling in uniaxially anisotropic magnetic molecules such as Mn_12Ac (S=10) is developed.The observed slow dynamics of the system is described by master equations for the…
In this work we present a study of the low temperature magnetic phases of polycrystalline MnCr$_2$O$_4$ spinel through dc magnetization and ferromagnetic resonance spectroscopy (FMR). Through these experiments we determined the main…
In this work we present results of the analysis of thermal properties of high-power laser bars obtained by spatially resolved thermoreflectance (TR) spectroscopy. Thermoreflectance is a modulation technique relying on periodic facet…
The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in…
We present low field thermoremanent magnetization (TRM) measurements in granular CrO2 and composites of ferromagnetic (FM) CrO2 and antiferromagnetic (AFM) Cr2O3. TRM in these samples is seen to display two distinct time scales. A quasi…
We present experimental results and macrospin simulations of the switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at…
Pinning magnetization in a ferromagnetic thin film is commonly realized through exchange biasing with an adjacent antiferromagnet. Field-cooling from above the N\'{e}el temperature is a reliable yet slow re-pinning method in exchange-biased…
We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs…