Related papers: Thermo-remnant magnetization assisted switching re…
Thermally assisted magnetic writing is an important technology utilizing temperature dependent magnetic properties to enable orientation of a magnetic data storage medium. Using an atomistic spin model we study non-equilibrium field cooled…
The dynamic process of assisted magnetic switchins has been simulated to investigate the associated physics. The model uses a Voronoi construction to determine the physical structure of the nano granular thin film recording media; and the…
The thermal remagnetization (TR), i.e. the reentrance of magnetization upon heating in a steady-field demagnetized sample, is a common feature to the four types of polycrystalline permanent magnets, mainly utilized for practical purposes,…
Time-dependent Thermoremanent Magnetization (TRM) studies have been instrumental in probing energy dynamics within the spin glass phase. In this paper, we will review the evolution of the TRM experiment over the last half century and…
Thermal spin-transfer torque describes the manipulation of the magnetization by the application of a heat flow. The effect has been calculated theoretically by Jia et al. in 2011. It is found to require large temperature gradients in the…
A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…
The balance between low power consumption and high efficiency in memory devices is a major limiting factor in the development of new technologies. Magnetic random access memories (MRAM) based on CoFeB/MgO magnetic tunnel junctions (MTJs)…
We report electrical resistivity, magnetic and magnetocaloric properties in Sm0.7-xLaxSr0.3MnO3 series for x= 0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.65, and 0.7. All the compounds show second order paramagnetic to ferromagnetic transition at T…
The search for novel spintronic devices brings about new ways to control switching in magnetic thin-films. In this work we experimentally demonstrate a device based on thermoelectrically controlled exchange coupling. The read out signal…
Spin transfer torque from spin-polarized electrical current can excite large-amplitude magnetization dynamics in metallic ferromagnets of nanoscale dimensions. Since magnetic anisotropy energies of nanomagnets are comparable to the thermal…
Using the quantum Monte Carlo Loop algorithm, we calculate the temperature dependence of the uniform susceptibility, the specific heat, the correlation length, the generalized staggered susceptibility and magnetization of a spin-1/2 chain…
The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-transfer-torque magnetic random access memory (STT-MRAM). Size…
Numerous authors have referred to room-temperature magnetic switching of large electric polarizations as The Holy Grail of magnetoelectricity.We report this long-sought effect using a new physical process of coupling between magnetic and…
The temperature and voltage dependence of spin transport is theoretically investigated in a new type of magnetic tunnel junction, which consists of two ferromagnetic outer electrodes separated by a ferromagnetic barrier and a nonmagnetic…
Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for…
Spin-resolved electron symmetry filtering is a key mechanism behind giant tunneling magnetoresistance (TMR) in Fe/MgO/Fe and similar magnetic tunnel junctions (MTJs), providing room temperature functionality in modern spin electronics.…
Using the Continuous Time Quantum Monte Carlo Loop algorithm, we calculate the temperature dependence of the uniform susceptibility, and the specific heat of a spin-1/2 chain with random antiferromagnetic and ferromagnetic couplings, down…
Spintronics exploits the magnetoresistance effects to store or sense the magnetic information. Since the magnetoresistance strictly depends on the magnetic anisotropy of the system, it is fundamental to set a defined anisotropy to the…