Related papers: Current-driven magnetization switching in a van de…
Low crystal symmetry of magnetic van der Waals materials naturally promotes spin-orbital complexity unachievable in common magnetic materials used for spin-orbit torque switching. Here, using first-principles methods, we demonstrate that an…
Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or…
This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered…
Two-dimensional (2D) sliding ferroelectric (FE) metals with ferrimagnetism represent a previously unexplored class of spintronic materials, featuring out-of-plane FE polarization, metallic conductivity, and a finite net magnetization, which…
Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires…
Van der Waals (vdW) heterostructures enable tailored electronic and magnetic phases by stacking atomically thin layers with pristine interfaces. Here, we investigate fully 2D Cr2Ge2Te6/WTe2 heterostructures and identify a strong enhancement…
Spin-related electronics using two dimensional (2D) van der Waals (vdW) materials as a platform are believed to hold great promise for revolutionizing the next generation spintronics. Although many emerging new phenomena have been…
Van der Waals (vdW) heterostructures have attracted great interest because of their rich material combinations.The discovery of two-dimensional magnets has provided a new platform for magnetic vdW heterointerfaces; however, research on…
To harness the intriguing properties of two-dimensional van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, we demonstrate the…
Spintronics has become a broad and important research field that intersects with magnetism, nano-electronics, and materials science. Its overarching aim is to provide a fundamental understanding of spin-dependent phenomena in solid-state…
Topological insulators (TIs) with spin momentum locked topological surface states (TSS) are expected to exhibit a giant spin-orbit torque (SOT) in the TI/ferromagnet systems. To date, the TI SOT driven magnetization switching is solely…
The exfoliation of layered magnetic materials generates atomically thin flakes characterized by an ultrahigh surface sensitivity, which makes their magnetic properties tunable via external stimuli, such as electrostatic gating and proximity…
Antiferromagnets have garnered significant attention due to their negligible stray field and ultrafast magnetic dynamics, which are promising for high-density and ultrafast spintronic applications. Their dual functionality as both spin…
Manipulation of long-range order in two-dimensional (2D) van der Waals (vdW) magnetic materials (e.g., CrI$_3$, CrSiTe$_3$ etc.), exfoliated in few-atomic layer, can be achieved via application of electric field, mechanical-constraint,…
Two-dimensional (2D) half-metallic materials are of great interest for their promising applications in spintronics. Although numerous of 2D half-metals have been proposed theoretically, rarely of them can be synthesized experimentally.…
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…
Based upon first-principles calculations, we report ultralow Gilbert damping in two-dimensional (2D) van derWaals (vdW) ferromagnets. The low damping occurs at weak scattering because mirror symmetry prohibits intraband transitions. The…
Magnetization switching by charge current without a magnetic field is essential for device applications and information technology. It generally requires a current-induced out-of-plane spin polarization beyond the capability of conventional…
Spintronics provides an efficient platform for realizing non-volatile memory and logic devices. In these systems, data is stored in the magnetization of magnetic materials, and magnetization is switched in the writing process. In…
Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here we propose a fully magnetically…