Related papers: Designing multi-level resistance states for multi-…
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…
Charge-lattice fluctuations are observed in the layered perovskite manganite LaSr2Mn2O7 by Raman spectroscopy as high as 340 K and with decreasing temperature they become static and form a charge ordered (CO) phase below TCO=210 K. In the…
Inspired by the strong experimental evidence for the coexistence of localized and itinerant charge carriers close to the metal-insulator transition in the ferromagnetic phase of colossal magnetoresistive manganese perovskites, for a…
Photo-excited quantum materials can be driven into thermally inaccessible metastable states that exhibit structural, charge, spin, topological and superconducting orders. Metastable states typically emerge on timescales set by the intrinsic…
Recently, oscillator-based Boolean computation has been proposed for its potentials in noise immunity and energy efficiency. In such a system, logic bits are encoded in the relative phases of oscillating signals and stored in…
Ion trap quantum computers often store qubits on field-sensitive S_1/2 ground state Zeeman levels of the valence electron, such as in 40Ca+, 88Sr+, and 138Ba+ atomic systems. We experimentally synthesize magnetically insensitive qubit…
We have investigated temperature-dependent behaviors of electronic structure and resistivity in a mixed-valent golden phase of SmS, based on the dynamical mean-field theory band structure calculations. Upon cooling, the coherent Sm 4$f$…
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…
Geometrically frustrated magnetic semiconductor $\textrm{CuMnO}_{2}$ has potential applications as photo-catalyst, in photochemical cells and multi-ferroic devices. Electronic band structure in the antiferromagnetic and ferromagnetic phases…
The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by…
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…
The sensitivity of transport in CMR manganite to external fields is examined using a PZT-based field effect configuration with a La0.7Ca0.3MnO3 channel subjected to electric and magnetic fields, separately and in conjugation. We not only…
We study the possibility of nanoscale phase separation in manganites in the framework of the double exchange model. The homogeneous canted state of this model is proved to be unstable toward the formation of small ferromagnetic droplets…
The irreversibility of the martensite transition in magnetic shape memory alloys (MSMAs) with respect to external magnetic field is one of the biggest challenges that limits their application as giant caloric materials. This transition is a…
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…
Throughout a complete Electron Spin Resonance (ESR) and magnetization study of La0.5Ca0.5MnO3, we discuss about the nature of the complex phase-segregated state established in this compound below T~210 K. Between TN<T<TC, the ESR spectra…
We investigate a lateral semiconductor quantum dot with a large number of electrons in the semi-open Fano regime. In transport measurements we observe three stable series of Fano resonances with similar lineshapes. We present a simple model…
The electronic structure inhomogeneities in Co, Ni, and Cr doped BaFe2As2 122 single crystals are compared using scanning tunneling microscopy/spectroscopy (STM/S) at the nanoscale within three bulk property regions in the phase diagram: a…
The resistivity as function of temperature of high temperature superconductors is very unusual and despite its importance lacks an unified theoretical explanation. It is linear with the temperature for overdoped compounds but it falls more…
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs…