Related papers: Designing multi-level resistance states for multi-…
One-dimensional (1D) confinement has been revealed to effectively tune the properties of materials in homogeneous states. The 1D physics can be further enriched by electronic inhomogeneity, which unfortunately remains largely unknown. Here…
We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS$_2$). Semiconductor - oxide…
The low temperature phase of single crystals of Nd$_{0.5}$Ca$_{0.5}$MnO$_3$ and Gd$_{0.5}$Ca$_{0.5}$MnO$_3$ manganites is investigated by squid magnetometry. Nd$_{0.5}$Ca$_{0.5}$MnO$_3$ undergoes a charge-ordering transition at…
We report a significant decrease in the low-temperature resistance induced by the application of an electric current on the $ab$-plane in the paramagnetic insulating (PMI) state of (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$. A…
We have studied the effect of metastable, irreversibility induced by repeated thermal cycles on the electric transport and magnetization of polycrystalline samples of La1-xCaxMnO3 (0.48\leq x \leq 0.55) close to charge ordering. With time…
This work presents the mathematical modeling and numerical investigation of a thermo-controlled Micro-Electro-Mechanical System (MEMS) obtained by coupling an HP memristor with mechanical and electrical resonators. Using the linear drift HP…
Self-interaction corrected local spin density approximation calculations were performed for La$_{(1-x)}$Sr$_x$MnO$_3$ (LSMO) ($0.0<x<0.5$). The influence and inter-relationship of Sr doping, magnetic structure, O displacements and phase…
Effects of disorder on the two competing phases, i.e., the ferromagnetic metal and the commensurate charge/lattice ordered insulator, are studied by Monte Carlo simulation. The disorder suppresses the charge/lattice ordering more strongly…
Thin films of strongly-correlated electron materials (SCEM) are often grown epitaxially on planar substrates and typically have anisotropic properties that are usually not captured by edge-mounted four-terminal electrical measurements,…
Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…
We investigate the magnetotransport properties of the one-band Hubbard-Holstein model at half-filling in three dimensions (3D) using exact diagonalization based semi-classical Monte Carlo simulations with phonons treated in the adiabatic…
Detailed magnetization measurements in La_{5/8-y}Pr_{y}Ca_{3/8} MnO_{3}, including magnetic relaxation properties, demonstrate the dynamic nature of the phase separated state in manganites. The difference between the field-cooled-cooling…
In this work the charge transport properties of charge ordered (CO) La1-xCaxMnO3 (LCMO) (x= 0.55, 0.67) epitaxial thin films and polycrystals are discussed following the recent controversy of localised electron states vs. weakly or de-…
Nonvolatile photonic integrated circuits employing phase change materials have relied either on optical switching mechanisms with precise multi-level control but poor scalability or electrical switching with seamless integration and…
Nominally pure undoped parent manganite LaMnO_3 exhibits a puzzling behavior inconsistent with a simple picture of an A-type antiferromagnetic insulator (A-AFI) with a cooperative Jahn-Teller ordering. We do assign its anomalous properties…
Microelectromechanical (MEMS) resonators are widely used in timekeeping applications, and recent advances in fabrication, materials, and encapsulation technology have advanced their potential as high stability frequency references. However,…
Controlling the electronic properties via bandstructure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, utilizing LuSb as a model system, we show that quantum confinement lifts…
Phase change memory (PCM) is an emerging data storage technology, however its programming is thermal in nature and typically not energy-efficient. Here we reduce the switching power of PCM through the combined approaches of filamentary…
Phase change memory (PCM) is an emerging high speed, high density, high endurance, and scalable non-volatile memory technology which utilizes the large resistivity contrast between the amorphous and crystalline phases of chalcogenide…
Low temperature resistivity of CMR manganites is investigated. At the ground state, conduction electrons are perfectly spin polarized, which is called half-metallic. From one-magnon scattering processes, it is discussed that the resistivity…