Related papers: Parylene Based Memristive Devices with Multilevel …
Diffusive memristors owing to their ability to produce current spiking when a constant or slowly changing voltage is applied are competitive candidates for the development of artificial electronic neurons. These artificial neurons can be…
The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large…
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…
CMOS-based computing systems that employ the von Neumann architecture are relatively limited when it comes to parallel data storage and processing. In contrast, the human brain is a living computational signal processing unit that operates…
Advanced flexible electronics and soft robotics require the development and implementation of flexible functional materials. Magnetoelectric (ME) oxide materials can convert magnetic input into electric output and vice versa, making them…
Defect engineering is a key strategy to control resistive switching (RS) in oxide-based memristive devices, where oxygen vacancy (OV) dynamics governs filament formation and rupture. We investigate the effect of Ag nanoparticles (AgNPs)…
Acting as artificial synapses, two-terminal memristive devices are considered fundamental building blocks for the realization of artificial neural networks. Organized into large arrays with a top-down approach, memristive devices in…
Materials exhibiting reversible resistive switching in electrical fields are highly demanded for functional elements in oxide electronics. In particular, multilevel switching effects allow for advanced applications like neuromorphic…
Probabilistic bits (p-bits) are stochastic hardware elements whose output probability can be tuned by an input bias, offering a route to energy-efficient architectures that exploit, rather than suppress, fluctuations. Here we report p-bit…
A large number of simulation models have been proposed over the years to mimic the electrical behaviour of memristive devices. The models are based either on sophisticated mathematical formulations that do not account for physical and…
Nanofluidic memristive devices work with nanoscale pores and ions dissolved in water, which harness the ionic memory effect aiming to store and process information. These devices share the same charge carriers as biological systems and…
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…
We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS$_2$). Semiconductor - oxide…
This study presents a comprehensive examination of the development of TiN/SiO$_\mathrm{x}$/Cu/SiO$_\mathrm{x}$/TiN memristive devices, engineered for neuromorphic applications using a wedge-type deposition technique and Monte Carlo…
Tensile creep tests, tensile relaxation tests and a tensile test with a constant rate of strain are performed on injection-molded isotactic polypropylene at room temperature in the vicinity of the yield point. A constitutive model is…
The recent observation of fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron-electron interaction dynamics. However, the technique used currently…
Cryogenic neuromorphic systems, inspired by the brains unparalleled efficiency, present a promising paradigm for next generation computing architectures.This work introduces a fully integrated neuromorphic framework that combines…
To obtain precisely controllable, robust as well as reproduceable memristor for efficient neuromorphic computing still very challenging. Molecular tailoring aims at obtaining the much more flexibly tuning plasticity has recently generated…
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…
Memristors, when utilized as electronic components in circuits, can offer opportunities for the implementation of novel reconfigurable electronics. While they have been used in large arrays, studies in ensembles of devices are comparatively…