Related papers: On-Chip Integrated Quantum-Dot Silicon-Nitride Mic…
Integration of high quality semiconductor-superconductor devices into scalable and CMOS compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs…
This paper describes a calculation of the spontaneous emission limited linewidth of a semiconductor laser consisting of hybrid or heterogeneously integrated, silicon and III-V intracavity components. Central to the approach are a)…
We show the first demonstration of a hybrid external cavity diode laser (ECDL) using aluminum nitride (AlN) as the wave-guiding material. Two devices are presented, a near-infrared (NIR) laser using a 850 nm diode and a red laser using a…
Quantum photonic technologies, such as quantum key distribution, are already benefiting greatly from the rise of integrated photonics. However, the flexibility in design of these systems is often restricted by the properties of the…
Freestanding Silicon nitride (SiN) devices are central to the field of nanomechanical resonators and for other technology applications such as transmission electron imaging and nanopore bioassays. The nanofabrication techniques used for…
Solid-state spin qubits within silicon crystals at mK temperatures show great promise in the realisation of a fully scalable quantum computation platform. Qubit coherence times are limited in natural silicon owing to coupling to the isotope…
Silicon-based terahertz quantum cascade lasers (QCLs) offer potential advantages over existing III-V devices. Although coherent electron transport effects are known to be important in QCLs, they have never been considered in Si-based device…
Integration of optical interconnects with silicon-based electronics can address the growing limitations facing chip-scale data transport as microprocessors become progressively faster. However, material lattice mismatch and incompatible…
Rare-earth-doped materials constitute the foundation of conventional solid-state lasers, but their bulk-crystal form is inherently incompatible with photonic integration, making it challenging to realize compact, high performance nanoscale…
User-friendly single-photon sources with high photon-extraction efficiency are crucial building blocks for photonic quantum applications. For many of these applications, such as long-distance quantum key distribution, the use of single-mode…
We demonstrate an on-chip Yb3+-doped lithium niobate (LN) microdisk laser. The intrinsic quality factors of the fabricated Yb3+-doped LN microdisk resonator are measured up to 3.79x10^5 at 976 nm wavelength and 1.1x10^6 at 1514 nm…
The quality factor (Q), mode volume (Veff), and room-temperature lasing threshold of microdisk cavities with embedded quantum dots (QDs) are investigated. Finite element method simulations of standing wave modes within the microdisk reveal…
Advances in nanotechnology provide techniques for the realisation of integrated quantum-optical circuits for on-chip quantum information processing(QIP). The indistinguishable single photons, required for such devices can be generated by…
We demonstrate a modulation-free laser stabilization system using a cavity-coupled MZI with aided acquisition on a low-loss SiN chip, achieving more than an order-of-magnitude improvement in locking range and over 36 dB noise suppression.
Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order…
We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5,400 is achieved by…
Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket…
Broadband active materials are pivotal for advancing emerging technologies spanning on-chip optical interconnects, artificial intelligence, quantum systems and precision metrology. Current semiconductor gain media face bandwidth…
We demonstrate an external cavity laser formed by combining a silicon nitride photonic integrated circuit with a reflective semiconductor optical amplifier. The laser uses an alignment tolerant edge coupler formed by a multi-mode waveguide…
Generating visible light with wide tunability and high coherence based on photonic integrated circuits is of high interest for applications in biophotonics, precision metrology and quantum technology. Here we present the first demonstration…