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We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic…
Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers.…
Rapid progress in photonics has led to an explosion of integrated devices that promise to deliver the same performance as table-top technology at the nanoscale; heralding the next generation of optical communications, sensing and metrology,…
Thin film lithium niobate (TFLN) has become an platform for modern integrated circuits due to its excellent optical properties. With the development of rare earth ion doped TFLN, important breakthroughs of on-chip microlasers has emerged…
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics due to its large $\chi^{(2)}$ nonlinearity. Here we demonstrate the hybrid integration of AlN on silicon nitride (SiN) photonic chips. Composite microrings are…
The smaller the size of a light-emitting microcavity, the more important it becomes to understand the effects of the cavity boundary on the optical mode profile. Conventional methods of laser physics, such as the paraxial approximation,…
A monolithically integrated mode-locked semiconductor laser is proposed. The compound ring cavity is composed of a colliding pulse mode-locking (ML) subcavity and a passive Fabry-Perot feedback subcavity. These two 1.6 mm long subcavities…
GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and…
Integrated photonics has profoundly impacted a wide range of technologies underpinning modern society. The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency. Over the…
Today's supercapacitor energy storages are typically discrete devices aimed for printed boards and power applications. The development of autonomous sensor networks and wearable electronics and the miniaturisation of mobile devices would…
Leveraging hybrid integration, we demonstrate dark-pulse formation at 780-nm wavelength band in integrated Si$_3$N$_4$ microresonators driven by high-power AlGaAs-based chip-scale lasers. The device outputs coherent frequency combs with…
On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus…
Erbium-doped lithium niobate high-Q microdisk cavities were fabricated in batches by UV exposure, inductively coupled plasma reactive ion etching and chemo-mechanical polishing. The stimulated emission at 1531.6 nm was observed under the…
The commercialization of lithium niobate on insulator (LNOI) wafer has sparked significant on-chip photonic integration application due to its remarkable photonic, photoacoustic, electro-optic and piezoelectric nature. A variety of on-chip…
Silicon nitride (SiN) photonics platform has attributes of ultra-low linear and nonlinear propagation losses and CMOS-compatible fabrication process, promising large-scale multifunctional photonic circuits. However, the centrosymmetric…
Spin-controlled lasers are highly interesting photonic devices and have been shown to provide ultra-fast polarization dynamics in excess of 200 GHz. In contrast to conventional semiconductor lasers their temporal properties are not limited…
We demonstrated a continuously tunable laser system by butt coupling a reflective semiconductor optical amplifier (RSOA) chip with a thin-film lithium niobate (TFLN) based multi-channel interference (MCI) cavity chip. This hybrid integrated…
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence,…
Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate…
High-performance, high-volume-manufacturing Si3N4 photonics requires extremely low waveguide losses augmented with heterogeneously integrated lasers for applications beyond traditional markets of high-capacity interconnects.…