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The recent discovery of two-dimensional magnetic order in van-der Waals materials has stimulated a renaissance in the field of atomically-thin magnets. This has led to promising demonstrations of spintronic functionality such as tunneling…
Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in…
Intrinsic, in-plane anisotropy of electrical resistivity was studied on mechanically detwinned single crystals of SrFe$_2$As$_2$ above and below the temperature of the coupled structural/magnetic transition, $T_{\textrm{TO}}$. Resistivity…
Main-group layered binary semiconductors, in particular, the III-VI alloys in the binary Ga-Te system are attracting increasing interest for a range of practical applications. The III-VI semiconductor, monoclinic gallium monotelluride…
Graphene antidot lattices (GALs) are two-dimensional (2D) monolayers with periodically placed holes in otherwise pristine graphene. We investigate the electronic properties of symmetric and asymmetric GAL structures having hexagonal holes,…
Two dimensional (2D) van der Waals (vdW) magnetic semiconductors are a new class of quantum materials for studying the emergent physics of excitons and spins in the 2D limit. Twist engineering provides a powerful tool to manipulate the…
The concept of an electronically-driven breaking of the rotational symmetry of a crystal, without involving magnetic order, has found experimental support in several systems, from semiconductor heterostructures and ruthenates, to cuprate…
Two-dimensional materials (2DM) and their derived heterostructures have electrical and optical properties that are widely tunable via several approaches, most notably electrostatic gating and interfacial engineering such as twisting. While…
In this work, the magneto-resistance (MR) of ultra-thin WTe2/BN heterostructures far away from electron-hole equilibrium is measured. The change of MR of such devices is found to be determined largely by a single tunable parameter, i.e. the…
Transistor miniaturization requires controlling gate leakage through ultrathin dielectrics and minimizing source/drain contact resistance. Although two-dimensional (2D) semiconductors offer excellent electrostatic control, their interfaces…
Measurements of the resistivity anisotropy can provide crucial information about the electronic structure and scattering processes in anisotropic and low-dimensional materials, but quantitative measurements by conventional means often…
The thermal conductivities of beta-Ga2O3 single crystals along four different crystal directions were measured in the temperature range of 80-495K using the time domain thermoreflectance (TDTR) method. A large anisotropy was found. At room…
To a significant extent, the rich physical properties of photonic crystals are determined by the underlying geometry, in which the composed symmetry operators and their combinations contribute to the unique topological invariant to…
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage,…
With a surge of interest in spintronics, the manipulation and detection of colossal magnetoresistance in quasi-two-dimensional layered magnetic materials have become a key focus, driven by their relatively scarce occurrence compared to…
Anisotropic magnetoresistance (AMR) has a crucial feature for developing highly sensitive sensors and innovative memory devices. While extensively studied in bulk materials, AMR effects in these materials are typically weak. Recent…
We report on a strong transport anisotropy in a 2D hole gas in a Ge/SiGe quantum well, which emerges only when both perpendicular and in-plane magnetic fields are present. The ratio of resistances, measured along and perpendicular to the…
Few-layer GaSe is one of the latest additions to the family of 2D semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile…
It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…
We study the anisotropic electronic properties of 2D SnS, an analogue of phosphorene, grown by physical vapor transport. With transmission electron microscope and polarized Raman spectroscopy, we identify the zigzag and armchair directions…