Related papers: A wet etching method for few-layer black phosphoru…
Large scale graphene electronics desires lithographic patterning of narrow graphene nanoribbons (GNRs) for device integration. However, conventional lithography can only reliably pattern ~20nm wide GNR arrays limited by lithography…
In this work, phosphorous-doped single-walled carbon nanotubes have been synthesized by the thermal decomposition of trimethylphosphine using a high-vacuum chemical vapor deposition method. Furthermore, a modified…
The discovery of graphene triggered a rapid rise of unexplored two-dimensional materials and heterostructures having optoelectronic and photonics properties that can be tailored on the nanoscale. Among these materials, black phosphorus (BP)…
Precise control of surface properties including electrical characteristics, wettability, and friction is a prerequisite for manufacturing modern organic electronic devices. The successful combination of bottom up approaches for aligning and…
Nanoporous metals are a class of nanostructured materials finding extensive applications in multiple fields thanks to their unique properties attributed to their high surface area and interconnected nanoscale ligaments. They can be…
Black phosphorus is a material with an intrinsic anisotropy in electronic and optical properties due to its puckered honeycomb lattice. Optical absorption is different for incident light with linear polarization in the armchair and zigzag…
Sapphire is an attractive material in photonic, optoelectronic, and transparent ceramic applications that stand to benefit from surface functionalization effects stemming from micro/nanostructures. Here we investigate the use of ultrafast…
It attracts wide interest to seek universe saturable absorber covering wavelengths from near infrared to mid-infrared band. Multilayer black phosphorus, with variable direct bandgap (0.3-2 eV) depending on the layer number, becomes a good…
Controlled integration of metallic nanoparticles (NPs) onto photonic nanostructures enables realization of complex devices for extreme light confinement and enhanced light-matter interaction. This can be achieved combining…
Doping of Si using the scanning probe hydrogen depassivation lithography technique has been shown to enable placing and positioning small numbers of P atoms with nanometer accuracy. Several groups have now used this capability to build…
Black phosphorus nitrogen (BP-N) is an attractive high-energy-density material. However, high-pressure synthesized BP-N will decompose at low-pressure and cannot be quenched to ambient conditions. Finding a method to stabilize it at 0 GPa…
Isolation and characterization of mechanically exfoliated black phosphorus flakes with a thickness down to two single-layers is presented. A modification of the mechanical exfoliation method, which provides higher yield of atomically thin…
Stacking two-dimensional (2D) materials into multi-layers or heterostructures, known as van der Waals (vdW) epitaxy, is an essential degree of freedom for tuning their properties on demand. Few-layer black phosphorus (FLBP), a material with…
Device passivation through ultraclean hexagonal BN encapsulation is proven one of the most effective ways for constructing high-quality devices with atomically thin semiconductors that preserves the ultraclean interface quality and…
We present a simple method to tune optical micro- and nanocavities with picometer precision in the resonant wavelength, corresponding to an effective sub atomic monolayer control of the cavity dimension. This is obtained through resonant…
Black phosphorus (bP) has been recently investigated for next generation nanoelectronic multifunctional devices. However, the intrinsic instability of exfoliated bP (the bP nanoflakes) towards both moisture and air has so far overshadowed…
A galvanic displacement reaction-based, room-temperature "dip-and-dry" technique is demonstrated for fabricating selectively solar-absorbing plasmonic nanostructure-coated foils (PNFs). The technique, which allows for facile tuning of the…
Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fabrication of ordered arrays of GaN NWs with aspect ratios…
Negative compressibility generated by many-body effects in 2D electronic systems can enhance gate capacitance. We observe capacitance enhancement in a newly emerged 2D layered material, atomically thin black phosphorus (BP). The…
Nowadays, microelectronics and nanoelectronics require the search for new materials, including masks for creating structures. Today, the intermediate hard mask strategy is one of the key issues in achieving a good balance between…