Related papers: Lattice-mismatched semiconductor heterostructures
Ultrawide bandgap (UWBG) semiconductors exhibit exceptional electrical and thermal properties, offering strong potential for high power and high frequency electronics. However, efficient doping in UWBG materials is typically limited to…
The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable…
Heteroepitaxy conventionally relies on rigid crystalline substrates, implicitly assuming that lattice and thermal mismatch must be accommodated within the epitaxial layer, leading to residual strain and defects that worsen with increasing…
We demonstrate fabrication of atomically sharp interfaces between nitride antiperovskite Mn$_{3}$GaN and oxide perovskites (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{3}$ (LSAT) and SrTiO$_{3}$ as paradigms of…
Recent advanced experimental implementations of optical lattices with highly tunable geometry open up new regimes for quantum many-body states of matter that previously had not been accessible. Here we introduce a symmetry-based method of…
The discovery of high-temperature superconductivity in FeSe/SrTiO3 has sparked significant interests in exploring new superconducting systems with engineered interfaces. Here, using molecular beam epitaxy growth, we successfully fabricate…
Synchrotron X-ray diffraction has been used to study the thermal structure evolution in CuBa2Ca3Cu4O10+d (Cu1234), a superconductor which exhibits a high critical temperature (Tc 118 K), high critical current density and large upper…
Harmonically trapped lattice bosons with strong repulsive interactions exhibit a superfluid-Mott-insulator heterostructure in the form of a "wedding cake". We discuss the mesoscopic aspects of such a system within a one-dimensional…
Undoped graphene is semi-metallic and thus not suitable for many electronic and optoelectronic applications requiring gapped semiconductor materials. However, a periodic array of holes (antidot lattice) renders graphene semiconducting with…
Metasurfaces are ultrathin, engineered materials composed of nanostructures that manipulate light in ways unattainable by natural materials. Recent advances have leveraged computational optimization, machine learning, and deep learning to…
Electronic, lattice, and spin interactions at the interfaces between crystalline complex transition metal oxides can give rise to a wide range of functional electronic and magnetic phenomena not found in bulk. At hetero-interfaces, these…
We develop a unified numerical approach for modeling semiconductor-superconductor heterostructures. Our approach takes into account on equal footing important key ingredients: proximity-induced superconductivity, orbital and Zeeman effect…
Recently, unconventional superconductivity having a zero-bias conductance peak is reported in doped topological Dirac semimetal (DSM) with lattice distortion. Motivated by the experiments, we theoretically study the possible…
Artificially engineered 2D materials offer unique physical properties for thermal management, surpassing naturally occurring materials. Here, using van der Waals epitaxy, we demonstrate the ability to engineer extremely insulating…
Progress in the emergent field of topological superconductivity relies on synthesis of new material combinations, combining superconductivity, low density, and spin-orbit coupling (SOC). For example, theory [1-4] indicates that the…
Two-dimensional semiconductors have emerged as a new class of materials for nanophotonics for their strong exciton-photon interaction and flexibility for engineering and integration. Taking advantage of these properties, we engineer an…
Semiconductor heterostructures that combine components with different dimensionality provide an interesting way to manipulate the physical properties of the resulting material. Two-dimensional lead halide perovskites crystallize as flat…
We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode…
The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered…
Semiconducting transition metal dichalcogenides (TMDs), such as MoSe$_2$ and WSe$_2$, exhibit unique optical and electronic properties. Vertical stacking of layers of one or more TMDs, to create heterostructures, has expanded the fields of…