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Related papers: Lattice-mismatched semiconductor heterostructures

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Stacking multiple SiSiGe channels in advanced logic devices faces severe thermal budget accumulation, which degrades interfaces via Ge-Si interdiffusion and strain relaxation.This strategy lowers the Ge diffusion coefficient to 5.6-7% of…

Materials Science · Physics 2026-05-08 Wenlong Yao , Zhigang Li , Guobin Bai , Jianfeng Gao , Jiahan Yu , Junfeng Li , Xiaolei Wang , Jun Luo

Advanced interface engineering provides a way to control the ground state of correlated oxide heterostructures, which enables the shaping of future electronic and magnetic nanodevices with enhanced performance. An especially promising and…

Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic and photonic devices. In the growth and processing of these…

Materials Science · Physics 2019-08-02 Guangrui , Xia

A correlated inhomogeneous mean-field approach is proposed in order to study a tight-binding model of the manganite heterostructures (LaMnO3)2n/(SrMnO3)n with average hole doping x = 1/3. Phase diagrams, spectral and optical properties of…

Strongly Correlated Electrons · Physics 2015-05-20 A. Iorio , C. A. Perroni , V. Marigliano Ramaglia , V. Cataudella

Epitaxial heterostructures composed of complex oxides have fascinated researchers for over a decade as they offer multiple degrees of freedom to unveil emergent many-body phenomena often unattainable in bulk. Recently, apart from…

Strongly Correlated Electrons · Physics 2016-08-19 Xiaoran Liu , S. Middey , Yanwei Cao , M. Kareev , J. Chakhalian

We have calculated electronic and optical properties of Si/BeSe$_{0.41}$Te$_{0.59}$ heterostructures by a semiempirical $sp^{3}s^{*}$ tight-binding method. Tight-binding parameters and band bowing of BeSe$_{0.41}$Te$_{0.59}$ are considered…

Materials Science · Physics 2009-07-01 Titus Sandu W. P. Kirk

While for many years the lattice, electronic and magnetic complexity of high-temperature superconductors (HTS) has been considered responsible for hindering the search of the mechanism of HTS now the complexity of HTS is proposed to be…

Superconductivity · Physics 2012-06-13 Antonio Bianconi , Nicola Poccia

Thermal boundary resistance (TBR) in semiconductor-on-diamond structure bottlenecks efficient heat dissipation in electronic devices. In this study, to reduce the TBR between GaN and diamond, surface-activated bonding with a hybrid SiOx-Ar…

Materials Science · Physics 2024-04-25 Bin Xu , Fengwen Mu , Yingzhou Liu , Rulei Guo , Shiqian Hu , Junichiro Shiomi

Two-dimensional heterostructures with layers of slightly different lattice vectors exhibit a new periodic structure known as moire lattices. Moire lattice formation provides a powerful new way to engineer the electronic structure of…

Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and…

Some important features of the graphene physics can be reproduced by loading ultracold fermionic atoms in a two-dimensional optical lattice with honeycomb symmetry and we address here its experimental feasibility. We analyze in great…

Quantum Physics · Physics 2009-10-27 Kean Loon Lee , Benoit Gremaud , Rui Han , Berthold-Georg Englert , Christian Miniatura

Moir\'e superlattices formed at the interface between stacked two-dimensional atomic crystals offer limitless opportunities to design materials with widely tunable properties and engineer intriguing quantum phases of matter. However,…

We present subwavelength resonant lattices fashioned as nano- and microstructured films as a basis for a host of device concepts. Whereas the canonical physical properties are fully embodied in a one-dimensional periodic lattice, the final…

Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary…

Van der Waals materials enable the construction of atomically sharp interfaces between compounds with distinct crystal and electronic properties. This is dramatically exploited in moir\'e systems, where a lattice mismatch or twist between…

New blends of simply synthesized quasi two-dimensional (quasi-2D) hydrophobic perovskite semiconductors, employed in high performance light emitting diodes (LEDs) which function due to excitonic energy transfer effects, are reported. These…

In the effective-mass approximation, the step-like crystal potential of a wurtzite semiconductor heterostucture should be supplemented by Dirac delta-function heterointerface terms. They stem from the difference in the Bloch functions of…

Mesoscale and Nanoscale Physics · Physics 2015-05-05 Eduard Takhtamirov

Unconventional superconductivity and magnetism are intertwined on a microscopic level in a wide class of materials, including high-$T_c$ cuprates, iron pnictides, and heavy-fermion compounds. A new approach to this most fundamental and…

Superconductivity · Physics 2021-07-07 Masahiro Naritsuka , Takahito Terashima , Yuji Matsuda

InGaN-based visible LEDs find commercial applications for solid-state lighting and displays, but lattice mismatch limits the thickness of InGaN quantum wells that can be grown on GaN with high crystalline quality. Since narrower wells…

Materials Science · Physics 2019-02-08 Logan Williams , Emmanouil Kioupakis

When two-dimensional atomic layers of different materials are brought into close proximity to form van der Waals (vdW) heterostructures, interactions between adjacent layers significantly influence their physicochemical properties. These…

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